Dynamics of interactions between HF and hafnium oxide during surface preparation of high-k dielectrics

Davoud Zamani; Manish Keswani; Omid Mahdavi; Jun Yan; Srini Raghavan; Farhang Shadman

doi:10.1109/TSM.2012.2196295

Dynamics of interactions between HF and hafnium oxide during surface preparation of high-k dielectrics

Davoud Zamani, Manish Keswani, Omid Mahdavi, Jun Yan, Srini Raghavan, Farhang Shadman

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The interactions of HF with hafnium oxide are important aspects of the post-etch cleaning of high-k dielectrics. The dynamics of these interactions during typical wafer rinsing are studied using a quartz crystal microbalance (QCM) equipped with a flow-through cell. A process model is developed showing that the overall rinse process consists of three simultaneous steps: adsorption, desorption, and etching involving fluoride species. The model is validated using the experimental data obtained in QCM. The key parameters of these process steps, namely, adsorption, desorption, and etch rate coefficients are determined using the combined experimental measurement and process modeling.

Original language	English (US)
Article number	6189800
Pages (from-to)	511-515
Number of pages	5
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	25
Issue number	3
DOIs	https://doi.org/10.1109/TSM.2012.2196295
State	Published - 2012

Keywords

Adsorption
desorption
high-k materials
quartz crystal microbalance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/TSM.2012.2196295

Cite this

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title = "Dynamics of interactions between HF and hafnium oxide during surface preparation of high-k dielectrics",

abstract = "The interactions of HF with hafnium oxide are important aspects of the post-etch cleaning of high-k dielectrics. The dynamics of these interactions during typical wafer rinsing are studied using a quartz crystal microbalance (QCM) equipped with a flow-through cell. A process model is developed showing that the overall rinse process consists of three simultaneous steps: adsorption, desorption, and etching involving fluoride species. The model is validated using the experimental data obtained in QCM. The key parameters of these process steps, namely, adsorption, desorption, and etch rate coefficients are determined using the combined experimental measurement and process modeling.",

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note = "Funding Information: This research was supported by SRC/Sematech Engineering Research Center for Environmentally Benign Semiconductor Manufacturing. Assistance from ASM America for preparation of some of the samples is acknowledged.",

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AU - Zamani, Davoud

AU - Keswani, Manish

AU - Mahdavi, Omid

AU - Yan, Jun

AU - Raghavan, Srini

AU - Shadman, Farhang

N1 - Funding Information: This research was supported by SRC/Sematech Engineering Research Center for Environmentally Benign Semiconductor Manufacturing. Assistance from ASM America for preparation of some of the samples is acknowledged.

PY - 2012

Y1 - 2012

N2 - The interactions of HF with hafnium oxide are important aspects of the post-etch cleaning of high-k dielectrics. The dynamics of these interactions during typical wafer rinsing are studied using a quartz crystal microbalance (QCM) equipped with a flow-through cell. A process model is developed showing that the overall rinse process consists of three simultaneous steps: adsorption, desorption, and etching involving fluoride species. The model is validated using the experimental data obtained in QCM. The key parameters of these process steps, namely, adsorption, desorption, and etch rate coefficients are determined using the combined experimental measurement and process modeling.

AB - The interactions of HF with hafnium oxide are important aspects of the post-etch cleaning of high-k dielectrics. The dynamics of these interactions during typical wafer rinsing are studied using a quartz crystal microbalance (QCM) equipped with a flow-through cell. A process model is developed showing that the overall rinse process consists of three simultaneous steps: adsorption, desorption, and etching involving fluoride species. The model is validated using the experimental data obtained in QCM. The key parameters of these process steps, namely, adsorption, desorption, and etch rate coefficients are determined using the combined experimental measurement and process modeling.

KW - Adsorption

KW - desorption

KW - high-k materials

KW - quartz crystal microbalance

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Dynamics of interactions between HF and hafnium oxide during surface preparation of high-k dielectrics

Abstract

Keywords

ASJC Scopus subject areas

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