Dual-wavelength passively mode-Locked semiconductor disk laser

Maik Scheller; Caleb W. Baker; Stephan W. Koch; Jerome V. Moloney

doi:10.1109/LPT.2016.2541626

Dual-wavelength passively mode-Locked semiconductor disk laser

Maik Scheller, Caleb W. Baker, Stephan W. Koch, Jerome V. Moloney

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A dual-wavelength mode-locked semiconductor vertical-external-cavity-surface-emitting laser is demonstrated. A semiconductor saturable absorber mirror allows for simultaneous mode locking of pulses centered at two center wavelengths with variable frequency spacing. The difference-frequency control is achieved with an intracavity etalon. Changing the finesse of the etalon enables the adjustment of the pulse duration between 6 and 35 ps. The emitted two-color pulses are modulated by a beat frequency in the terahertz range. Self-starting mode-locking with 0.8-W average output power is demonstrated.

Original language	English (US)
Article number	7442077
Pages (from-to)	1325-1327
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	28
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2016.2541626
State	Published - Jun 15 2016

Keywords

Semiconductor lasers
mode-locked lasers
terahertz
vertical cavity surface emitting lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2016.2541626

Cite this

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title = "Dual-wavelength passively mode-Locked semiconductor disk laser",

abstract = "A dual-wavelength mode-locked semiconductor vertical-external-cavity-surface-emitting laser is demonstrated. A semiconductor saturable absorber mirror allows for simultaneous mode locking of pulses centered at two center wavelengths with variable frequency spacing. The difference-frequency control is achieved with an intracavity etalon. Changing the finesse of the etalon enables the adjustment of the pulse duration between 6 and 35 ps. The emitted two-color pulses are modulated by a beat frequency in the terahertz range. Self-starting mode-locking with 0.8-W average output power is demonstrated.",

keywords = "Semiconductor lasers, mode-locked lasers, terahertz, vertical cavity surface emitting lasers",

author = "Maik Scheller and Baker, {Caleb W.} and Koch, {Stephan W.} and Moloney, {Jerome V.}",

note = "Funding Information: This work was supported by the Air Force Office of Scientific Research through the Basic Research Initiative Program under Grant FA9550-14-1-0062 and the AFOSR DURIP FA2386-14-1-3001. Publisher Copyright: {\textcopyright} 1989-2012 IEEE.",

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doi = "10.1109/LPT.2016.2541626",

language = "English (US)",

volume = "28",

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journal = "IEEE Photonics Technology Letters",

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T1 - Dual-wavelength passively mode-Locked semiconductor disk laser

AU - Scheller, Maik

AU - Baker, Caleb W.

AU - Koch, Stephan W.

AU - Moloney, Jerome V.

N1 - Funding Information: This work was supported by the Air Force Office of Scientific Research through the Basic Research Initiative Program under Grant FA9550-14-1-0062 and the AFOSR DURIP FA2386-14-1-3001. Publisher Copyright: © 1989-2012 IEEE.

PY - 2016/6/15

Y1 - 2016/6/15

N2 - A dual-wavelength mode-locked semiconductor vertical-external-cavity-surface-emitting laser is demonstrated. A semiconductor saturable absorber mirror allows for simultaneous mode locking of pulses centered at two center wavelengths with variable frequency spacing. The difference-frequency control is achieved with an intracavity etalon. Changing the finesse of the etalon enables the adjustment of the pulse duration between 6 and 35 ps. The emitted two-color pulses are modulated by a beat frequency in the terahertz range. Self-starting mode-locking with 0.8-W average output power is demonstrated.

AB - A dual-wavelength mode-locked semiconductor vertical-external-cavity-surface-emitting laser is demonstrated. A semiconductor saturable absorber mirror allows for simultaneous mode locking of pulses centered at two center wavelengths with variable frequency spacing. The difference-frequency control is achieved with an intracavity etalon. Changing the finesse of the etalon enables the adjustment of the pulse duration between 6 and 35 ps. The emitted two-color pulses are modulated by a beat frequency in the terahertz range. Self-starting mode-locking with 0.8-W average output power is demonstrated.

KW - Semiconductor lasers

KW - mode-locked lasers

KW - terahertz

KW - vertical cavity surface emitting lasers

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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ER -

Dual-wavelength passively mode-Locked semiconductor disk laser

Abstract

Keywords

ASJC Scopus subject areas

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