Abstract
The need for ultrapure water in the semiconductor industry has increased significantly in the last decade. Ultrapure water is used to clean wafer surfaces in the manufacture of semiconductor devices. There exist certain recalcitrant (hard to remove) compounds in the water that can cause defects in these semiconductor devices. This study deals with one of these compounds, that being colloidal silica. Silica comes in three forms: colloidal, dissolved, and particulate. Dissolved and particulate silica are easily removed from water. Colloidal silica, however, is very difficult to remove. It has been shown that colloidal silica can be converted to dissolved silica through dissolution by OH ions. Thus, if the colloidal silica was converted to dissolved silica, it could then be removed from the water. Dissolution of colloidal silica by OH ions would require the addition of another impurity in the water for the OH ion source, such as the addition of a base. This research attempted to determine whether OH radicals, such as those produced by UV lights activation of a photocatalytic surface (TiO2), would also be effective in the conversion of colloidal silica.
Original language | English (US) |
---|---|
Pages | 59-70 |
Number of pages | 12 |
State | Published - 1997 |
Event | Proceedings of the 1997 16th Annual Semiconductor Pure Water and Chemicals, SPWCC. Part 2 (of 2) - Santa Clara, CA, USA Duration: Mar 3 1997 → Mar 7 1997 |
Other
Other | Proceedings of the 1997 16th Annual Semiconductor Pure Water and Chemicals, SPWCC. Part 2 (of 2) |
---|---|
City | Santa Clara, CA, USA |
Period | 3/3/97 → 3/7/97 |
ASJC Scopus subject areas
- Water Science and Technology
- Electronic, Optical and Magnetic Materials