Direct STM measurements of R-type and H-type twisted MoSe2/WSe2

Rachel Nieken, Anna Roche, Fateme Mahdikhanysarvejahany, Takashi Taniguchi, Kenji Watanabe, Michael R. Koehler, David G. Mandrus, John Schaibley, Brian J. Leroy

Research output: Contribution to journalArticlepeer-review

Abstract

When semiconducting transition metal dichalcogenide heterostructures are stacked, the twist angle and lattice mismatch lead to a periodic moiré potential. As the angle between the layers changes, so do the electronic properties. As the angle approaches 0° or 60°, interesting characteristics and properties, such as modulations in the band edges, flat bands, and confinement, are predicted to occur. Here, we report scanning tunneling microscopy and spectroscopy measurements on the bandgaps and band modulations in MoSe2/WSe2 heterostructures with near 0° rotation (R-type) and near 60° rotation (H-type). We find a modulation of the bandgap for both stacking configurations with a larger modulation for R-type than for H-type as predicted by theory. Furthermore, local density of states images show that electrons are localized differently at the valence band and conduction band edges.

Original languageEnglish (US)
Article number031107
JournalAPL Materials
Volume10
Issue number3
DOIs
StatePublished - Mar 1 2022
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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