Direct interferometric measurements of quantum-confined stark effect IN InAs/GaAs short period strained-layer superlattice MQWs

S. D. Koehler; E. M. Garmire; M. H. Jupina; T. C. Hasenberg; A. R. Kost

doi:10.1049/el:19911426

Direct interferometric measurements of quantum-confined stark effect IN InAs/GaAs short period strained-layer superlattice MQWs

S. D. Koehler, E. M. Garmire, M. H. Jupina, T. C. Hasenberg, A. R. Kost

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The electrorefraction within and below the band edge of multiple (50) InAs/GaAs short period strained-layer superlattice quantum wells has been measured. An index change of 4 × 10⁻³ was measured near the excitonic resonance with an applied electric field of 27 kV/cm, corresponding to a quadratic electro-optic coefficient of − 3 × 10⁻¹³cm²/V². These results agree with predictions from the Kramers-Kronig relations based on measurements of electroabsorption.

Original language	English (US)
Pages (from-to)	2303-2304
Number of pages	2
Journal	Electronics Letters
Volume	27
Issue number	25
DOIs	https://doi.org/10.1049/el:19911426
State	Published - Nov 21 1991
Externally published	Yes

Keywords

Semiconductor devices and material testing
Semiconductor materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19911426

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title = "Direct interferometric measurements of quantum-confined stark effect IN InAs/GaAs short period strained-layer superlattice MQWs",

abstract = "The electrorefraction within and below the band edge of multiple (50) InAs/GaAs short period strained-layer superlattice quantum wells has been measured. An index change of 4 × 10−3 was measured near the excitonic resonance with an applied electric field of 27 kV/cm, corresponding to a quadratic electro-optic coefficient of − 3 × 10−13cm2/V2. These results agree with predictions from the Kramers-Kronig relations based on measurements of electroabsorption.",

keywords = "Semiconductor devices and material testing, Semiconductor materials",

author = "Koehler, {S. D.} and Garmire, {E. M.} and Jupina, {M. H.} and Hasenberg, {T. C.} and Kost, {A. R.}",

year = "1991",

month = nov,

day = "21",

doi = "10.1049/el:19911426",

language = "English (US)",

volume = "27",

pages = "2303--2304",

journal = "Electronics Letters",

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T1 - Direct interferometric measurements of quantum-confined stark effect IN InAs/GaAs short period strained-layer superlattice MQWs

AU - Koehler, S. D.

AU - Garmire, E. M.

AU - Jupina, M. H.

AU - Hasenberg, T. C.

AU - Kost, A. R.

PY - 1991/11/21

Y1 - 1991/11/21

N2 - The electrorefraction within and below the band edge of multiple (50) InAs/GaAs short period strained-layer superlattice quantum wells has been measured. An index change of 4 × 10−3 was measured near the excitonic resonance with an applied electric field of 27 kV/cm, corresponding to a quadratic electro-optic coefficient of − 3 × 10−13cm2/V2. These results agree with predictions from the Kramers-Kronig relations based on measurements of electroabsorption.

AB - The electrorefraction within and below the band edge of multiple (50) InAs/GaAs short period strained-layer superlattice quantum wells has been measured. An index change of 4 × 10−3 was measured near the excitonic resonance with an applied electric field of 27 kV/cm, corresponding to a quadratic electro-optic coefficient of − 3 × 10−13cm2/V2. These results agree with predictions from the Kramers-Kronig relations based on measurements of electroabsorption.

KW - Semiconductor devices and material testing

KW - Semiconductor materials

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EP - 2304

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

Direct interferometric measurements of quantum-confined stark effect IN InAs/GaAs short period strained-layer superlattice MQWs

Abstract

Keywords

ASJC Scopus subject areas

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