The electrorefraction within and below the band edge of multiple (50) InAs/GaAs short period strained-layer superlattice quantum wells has been measured. An index change of 4 × 10−3 was measured near the excitonic resonance with an applied electric field of 27 kV/cm, corresponding to a quadratic electro-optic coefficient of − 3 × 10−13cm2/V2. These results agree with predictions from the Kramers-Kronig relations based on measurements of electroabsorption.
- Semiconductor devices and material testing
- Semiconductor materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering