@inproceedings{cb8cb1f3278346eb9d26a40dd936618b,
title = "Dilute HF solutions for copper cleaning during BEOL processes: Effect of aeration on selectivity and copper corrosion",
abstract = "Effectiveness of dilute HF based formulations in selectively removing copper oxide (CuOx) films with respect to copper and dielectric films has been investigated. Key solution variables studied include HF concentration, dissolved oxygen level and pH. Improved CuOx/Cu selectivity has been achieved under deaerated conditions. Deaerated solution containing 1000:1 HF (pH3) provides CuOx/Cu selectivity of ∼50:1 and CuO x/low-k dielectric (Carbon Doped Oxide) selectivity of ∼15:1. Conditions under which copper can be passivated during cleaning in dilute HF have been explored using electrochemical polarization studies and Electrochemical Quartz Crystal Microbalance (EQCM).",
author = "Thanu, {D. P.R.} and N. Venkataraman and S. Raghavan and O. Mahdavi",
year = "2009",
doi = "10.1149/1.3202642",
language = "English (US)",
isbn = "9781566777421",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "109--116",
booktitle = "ECS Transactions - Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11",
edition = "5",
note = "11th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing - 216th ECS Meeting ; Conference date: 04-10-2009 Through 09-10-2009",
}