Dielectric properties of sol-gel derived ZnO thin films

T. P. Alexander; T. J. Bukowski; G. Teowee; D. R. Uhlmann; K. C. McCarthy; J. Dawley; B. J.J. Zelinski

Dielectric properties of sol-gel derived ZnO thin films

T. P. Alexander, T. J. Bukowski, G. Teowee, D. R. Uhlmann, K. C. McCarthy, J. Dawley, B. J.J. Zelinski

Research output: Contribution to conference › Paper › peer-review

Abstract

Sol-gel derived ZnO thin films were prepared on platinized Si wafers and fired to temperatures ranging from 550C to 700C. Multiple spincoating was performed with an intermediate firing at 400C between coatings to obtain films up to 6000 A thick. Top Pt electrodes were sputtered to form monolithic capacitors. Dielectric characterization indicated dielectric constants as large as 24, twice the highest value reported previously. The leakage currents decreased with increasing firing temperature. XRD indicated that the films consisted of crystalline wurtzite films at firing temperatures as low as 400C and that the c-axis orientation increased with increasing firing temperature. Piezoelectric characterization indicated d₃₃ values as large as 17 pm/V, which is larger than any previously reported value for ZnO films.

Original language	English (US)
Pages	585-588
Number of pages	4
State	Published - 1996
Event	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Duration: Aug 18 1996 → Aug 21 1996

Other

Other	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
City	East Brunswick, NJ, USA
Period	8/18/96 → 8/21/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Dielectric properties of sol-gel derived ZnO thin films",

abstract = "Sol-gel derived ZnO thin films were prepared on platinized Si wafers and fired to temperatures ranging from 550C to 700C. Multiple spincoating was performed with an intermediate firing at 400C between coatings to obtain films up to 6000 A thick. Top Pt electrodes were sputtered to form monolithic capacitors. Dielectric characterization indicated dielectric constants as large as 24, twice the highest value reported previously. The leakage currents decreased with increasing firing temperature. XRD indicated that the films consisted of crystalline wurtzite films at firing temperatures as low as 400C and that the c-axis orientation increased with increasing firing temperature. Piezoelectric characterization indicated d33 values as large as 17 pm/V, which is larger than any previously reported value for ZnO films.",

author = "Alexander, {T. P.} and Bukowski, {T. J.} and G. Teowee and Uhlmann, {D. R.} and McCarthy, {K. C.} and J. Dawley and Zelinski, {B. J.J.}",

year = "1996",

language = "English (US)",

pages = "585--588",

note = "Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) ; Conference date: 18-08-1996 Through 21-08-1996",

}

TY - CONF

T1 - Dielectric properties of sol-gel derived ZnO thin films

AU - Alexander, T. P.

AU - Bukowski, T. J.

AU - Teowee, G.

AU - Uhlmann, D. R.

AU - McCarthy, K. C.

AU - Dawley, J.

AU - Zelinski, B. J.J.

PY - 1996

Y1 - 1996

N2 - Sol-gel derived ZnO thin films were prepared on platinized Si wafers and fired to temperatures ranging from 550C to 700C. Multiple spincoating was performed with an intermediate firing at 400C between coatings to obtain films up to 6000 A thick. Top Pt electrodes were sputtered to form monolithic capacitors. Dielectric characterization indicated dielectric constants as large as 24, twice the highest value reported previously. The leakage currents decreased with increasing firing temperature. XRD indicated that the films consisted of crystalline wurtzite films at firing temperatures as low as 400C and that the c-axis orientation increased with increasing firing temperature. Piezoelectric characterization indicated d33 values as large as 17 pm/V, which is larger than any previously reported value for ZnO films.

AB - Sol-gel derived ZnO thin films were prepared on platinized Si wafers and fired to temperatures ranging from 550C to 700C. Multiple spincoating was performed with an intermediate firing at 400C between coatings to obtain films up to 6000 A thick. Top Pt electrodes were sputtered to form monolithic capacitors. Dielectric characterization indicated dielectric constants as large as 24, twice the highest value reported previously. The leakage currents decreased with increasing firing temperature. XRD indicated that the films consisted of crystalline wurtzite films at firing temperatures as low as 400C and that the c-axis orientation increased with increasing firing temperature. Piezoelectric characterization indicated d33 values as large as 17 pm/V, which is larger than any previously reported value for ZnO films.

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M3 - Paper

AN - SCOPUS:0030361049

SP - 585

EP - 588

T2 - Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)

Y2 - 18 August 1996 through 21 August 1996

ER -

Dielectric properties of sol-gel derived ZnO thin films

Abstract

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ASJC Scopus subject areas

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