Dielectric and ferroelectric properties of sol-gel derived BiFeO3 films

G. Teowee; K. McCarthy; F. McCarthy; T. J. Bukowski; T. P. Alexander; D. R. Uhlmann

doi:10.1080/10584589708221710

Dielectric and ferroelectric properties of sol-gel derived BiFeO₃ films

G. Teowee, K. McCarthy, F. McCarthy, T. J. Bukowski, T. P. Alexander, D. R. Uhlmann

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

There has been a lot of interest on ferroelectric (FE) films especially for non-volatile memories and ultra high density DRAM applications. These films such as PZT and (Ba,Sr)TiO₃ are crystalline perovskite. BiFeO₃ is an interesting antiferromagnetic material which belongs to the perovskite crystal structure. Sol-gel derived BiFeO₃ films have been prepared on platinized Si substrates and their electrical and magnetic properties were obtained. XRD indicated that the films were crystalline perovskite when fired at 400°C and above. Dielectric constant of up to 100 was also obtained; however, the films tend to exhibit low resistivities especially in films fired to higher temperatures. The hysteretic loops obtained indicated a remanent polarization and coercive field of 5.5 μC/cm² and 180 kV/cm respectively.

Original language	English (US)
Pages (from-to)	329-337
Number of pages	9
Journal	Integrated Ferroelectrics
Volume	18
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589708221710
State	Published - 1997

Keywords

BiFeO
Dielectric properties
Ferroelectric films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/10584589708221710

Cite this

@article{5e9b6b5873454096aa6407a0355dbee3,

title = "Dielectric and ferroelectric properties of sol-gel derived BiFeO3 films",

abstract = "There has been a lot of interest on ferroelectric (FE) films especially for non-volatile memories and ultra high density DRAM applications. These films such as PZT and (Ba,Sr)TiO3 are crystalline perovskite. BiFeO3 is an interesting antiferromagnetic material which belongs to the perovskite crystal structure. Sol-gel derived BiFeO3 films have been prepared on platinized Si substrates and their electrical and magnetic properties were obtained. XRD indicated that the films were crystalline perovskite when fired at 400°C and above. Dielectric constant of up to 100 was also obtained; however, the films tend to exhibit low resistivities especially in films fired to higher temperatures. The hysteretic loops obtained indicated a remanent polarization and coercive field of 5.5 μC/cm2 and 180 kV/cm respectively.",

keywords = "BiFeO, Dielectric properties, Ferroelectric films",

author = "G. Teowee and K. McCarthy and F. McCarthy and Bukowski, {T. J.} and Alexander, {T. P.} and Uhlmann, {D. R.}",

note = "Funding Information: The financial support of the Donnelly Corporation and the Air Force Office of Scientific Research is greatly appreciated.",

year = "1997",

doi = "10.1080/10584589708221710",

language = "English (US)",

volume = "18",

pages = "329--337",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

}

TY - JOUR

T1 - Dielectric and ferroelectric properties of sol-gel derived BiFeO3 films

AU - Teowee, G.

AU - McCarthy, K.

AU - McCarthy, F.

AU - Bukowski, T. J.

AU - Alexander, T. P.

AU - Uhlmann, D. R.

N1 - Funding Information: The financial support of the Donnelly Corporation and the Air Force Office of Scientific Research is greatly appreciated.

PY - 1997

Y1 - 1997

N2 - There has been a lot of interest on ferroelectric (FE) films especially for non-volatile memories and ultra high density DRAM applications. These films such as PZT and (Ba,Sr)TiO3 are crystalline perovskite. BiFeO3 is an interesting antiferromagnetic material which belongs to the perovskite crystal structure. Sol-gel derived BiFeO3 films have been prepared on platinized Si substrates and their electrical and magnetic properties were obtained. XRD indicated that the films were crystalline perovskite when fired at 400°C and above. Dielectric constant of up to 100 was also obtained; however, the films tend to exhibit low resistivities especially in films fired to higher temperatures. The hysteretic loops obtained indicated a remanent polarization and coercive field of 5.5 μC/cm2 and 180 kV/cm respectively.

AB - There has been a lot of interest on ferroelectric (FE) films especially for non-volatile memories and ultra high density DRAM applications. These films such as PZT and (Ba,Sr)TiO3 are crystalline perovskite. BiFeO3 is an interesting antiferromagnetic material which belongs to the perovskite crystal structure. Sol-gel derived BiFeO3 films have been prepared on platinized Si substrates and their electrical and magnetic properties were obtained. XRD indicated that the films were crystalline perovskite when fired at 400°C and above. Dielectric constant of up to 100 was also obtained; however, the films tend to exhibit low resistivities especially in films fired to higher temperatures. The hysteretic loops obtained indicated a remanent polarization and coercive field of 5.5 μC/cm2 and 180 kV/cm respectively.

KW - BiFeO

KW - Dielectric properties

KW - Ferroelectric films

UR - http://www.scopus.com/inward/record.url?scp=11544318253&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11544318253&partnerID=8YFLogxK

U2 - 10.1080/10584589708221710

DO - 10.1080/10584589708221710

M3 - Article

AN - SCOPUS:11544318253

SN - 1058-4587

VL - 18

SP - 329

EP - 337

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

ER -