TY - GEN
T1 - Development of fully depleted scientific CCD's for astronomy
AU - Boggs, Kasey
AU - Bredthauer, Richard
AU - Lesser, Michael
PY - 2007
Y1 - 2007
N2 - Due to aggressive scientific specifications, Semiconductor Technology Associates and the University of Arizona's Imaging Technology Laboratory have collaborated to develop a fully depleted back illuminated CCD for scientific imaging. These devices are designed to target increased quantum efficiency into the near-infrared, without reduction in the modulation transfer function, charge transfer efficiency, or rms noise. The STA1700 series imagers are back illuminated 100 micron thick devices with a 10 micron pixel pitch targeted to meet the requirements of the Large Synoptic Survey Telescope (LSST). Recent characterization results will be presented including the point spread function of a 2 micron spot. Also discussed will be the thinning and packaging developments for the STA1700. These efforts include the addition of a backside bias contact, invar package design with high density connectors, as well as etching and backside coating optimization for high resistivity silicon.
AB - Due to aggressive scientific specifications, Semiconductor Technology Associates and the University of Arizona's Imaging Technology Laboratory have collaborated to develop a fully depleted back illuminated CCD for scientific imaging. These devices are designed to target increased quantum efficiency into the near-infrared, without reduction in the modulation transfer function, charge transfer efficiency, or rms noise. The STA1700 series imagers are back illuminated 100 micron thick devices with a 10 micron pixel pitch targeted to meet the requirements of the Large Synoptic Survey Telescope (LSST). Recent characterization results will be presented including the point spread function of a 2 micron spot. Also discussed will be the thinning and packaging developments for the STA1700. These efforts include the addition of a backside bias contact, invar package design with high density connectors, as well as etching and backside coating optimization for high resistivity silicon.
KW - Charge transfer efficiency
KW - Point spread function
KW - RMS noise
UR - http://www.scopus.com/inward/record.url?scp=34548251401&partnerID=8YFLogxK
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U2 - 10.1117/12.698409
DO - 10.1117/12.698409
M3 - Conference contribution
AN - SCOPUS:34548251401
SN - 081946614X
SN - 9780819466143
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Proceedings of SPIE-IS and T Electronic Imaging - Sensors, Cameras, and Systems for Scientific/Industrial Applications VIII
PB - SPIE
T2 - Sensors, Cameras, and Systems for Scientific/Industrial Applications VIII
Y2 - 30 January 2007 through 1 February 2007
ER -