Abstract
We combine Z-contrast scanning transmission electron microscopy with density-functional-theory calculations to determine the atomic structure of the Fe/AlGaAs interface in spin-polarized light-emitting diodes. A 44% increase in spin-injection efficiency occurs after a low-temperature anneal, which produces an ordered, coherent interface consisting of a single atomic plane of alternating Fe and As atoms. First-principles transport calculations indicate that the increase in spin-injection efficiency is due to the abruptness and coherency of the annealed interface.
Original language | English (US) |
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Article number | 196101 |
Journal | Physical review letters |
Volume | 96 |
Issue number | 19 |
DOIs | |
State | Published - 2006 |
Externally published | Yes |
ASJC Scopus subject areas
- General Physics and Astronomy