TY - JOUR
T1 - Detection of semiconductor dopants using accelerator mass spectrometry
AU - Anthony, J. M.
AU - Donahue, D. J.
AU - Jull, A. J.T.
AU - Zabel, T. H.
PY - 1985/5/15
Y1 - 1985/5/15
N2 - We have used the tandem accelerator mass spectrometer at the University of Arizona to detect dopants and other impurities in Si and GaAs. B, P, As and Sb doped Si crystals have been examined, with detection limits ranging from ~ 0.5 ppb (parts-per-billion) for B to ~10 ppb for P and Sb. B and Cr doped GaAs have also been examined, with detection limits of ~ 0.5 and 40 ppb, respectively. The terminal voltage for these experiments was 1.8 MV, and a post-acceleration carbon stripper foil ( ~ 350 Å) was used to lower the magnetic rigidity of heavy ions before entering the analyzing magnets.
AB - We have used the tandem accelerator mass spectrometer at the University of Arizona to detect dopants and other impurities in Si and GaAs. B, P, As and Sb doped Si crystals have been examined, with detection limits ranging from ~ 0.5 ppb (parts-per-billion) for B to ~10 ppb for P and Sb. B and Cr doped GaAs have also been examined, with detection limits of ~ 0.5 and 40 ppb, respectively. The terminal voltage for these experiments was 1.8 MV, and a post-acceleration carbon stripper foil ( ~ 350 Å) was used to lower the magnetic rigidity of heavy ions before entering the analyzing magnets.
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U2 - 10.1016/0168-583X(85)90295-2
DO - 10.1016/0168-583X(85)90295-2
M3 - Article
AN - SCOPUS:0021429385
SN - 0168-583X
VL - 10-11
SP - 498
EP - 500
JO - Nuclear Inst. and Methods in Physics Research, B
JF - Nuclear Inst. and Methods in Physics Research, B
IS - PART 1
ER -