Design of the stressed Ge:Ga far-infrared array for SIRTF

Richard Schnurr; Craig L. Thompson; James T. Davis; Jeffrey W. Beeman; James Cadien; Erick T. Young; Eugene E. Haller; George H. Rieke

doi:10.1117/12.317318

Design of the stressed Ge:Ga far-infrared array for SIRTF

Richard Schnurr, Craig L. Thompson, James T. Davis, Jeffrey W. Beeman, James Cadien, Erick T. Young, Eugene E. Haller, George H. Rieke

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

Stressed Ge:Ga is currently the most suitable detector type for very low background operation in the 115 to 200 micrometers range. Nonetheless, substantial advances have been required to develop stressed Ge:Ga detectors that work at the background limit in SIRTF. Both dark current and read noise have been improved significantly for the SIRTF devices. The design also takes account of space flight requirements such as the necessity to anneal the focal plane thermally using a minimum of cryogenic power dissipation, and the desire that any failures not propagate through an entire focal plane. The SIRTF 2 X 20 pixel focal plane will have dark current of about 200 e/s, read noise of 100 e rms, and responsivity > 7 A/W. As a result, even in the darkest parts of the sky, it will reach the background limit in less than 4 seconds of integration.

Original language	English (US)
Pages (from-to)	322-331
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3354
DOIs	https://doi.org/10.1117/12.317318
State	Published - 1998
Event	Infrared Astronomical Instrumentation - Kona, HI, United States Duration: Mar 23 1998 → Mar 23 1998

Keywords

Detectors
Infrared
MIPS
SIRTF

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.317318

Cite this

@article{3175c25931dc4f63856d4ef0e7a22e9e,

title = "Design of the stressed Ge:Ga far-infrared array for SIRTF",

abstract = "Stressed Ge:Ga is currently the most suitable detector type for very low background operation in the 115 to 200 micrometers range. Nonetheless, substantial advances have been required to develop stressed Ge:Ga detectors that work at the background limit in SIRTF. Both dark current and read noise have been improved significantly for the SIRTF devices. The design also takes account of space flight requirements such as the necessity to anneal the focal plane thermally using a minimum of cryogenic power dissipation, and the desire that any failures not propagate through an entire focal plane. The SIRTF 2 X 20 pixel focal plane will have dark current of about 200 e/s, read noise of 100 e rms, and responsivity > 7 A/W. As a result, even in the darkest parts of the sky, it will reach the background limit in less than 4 seconds of integration.",

keywords = "Detectors, Infrared, MIPS, SIRTF",

author = "Richard Schnurr and Thompson, {Craig L.} and Davis, {James T.} and Beeman, {Jeffrey W.} and James Cadien and Young, {Erick T.} and Haller, {Eugene E.} and Rieke, {George H.}",

year = "1998",

doi = "10.1117/12.317318",

language = "English (US)",

volume = "3354",

pages = "322--331",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Infrared Astronomical Instrumentation ; Conference date: 23-03-1998 Through 23-03-1998",

}

TY - JOUR

T1 - Design of the stressed Ge:Ga far-infrared array for SIRTF

AU - Schnurr, Richard

AU - Thompson, Craig L.

AU - Davis, James T.

AU - Beeman, Jeffrey W.

AU - Cadien, James

AU - Young, Erick T.

AU - Haller, Eugene E.

AU - Rieke, George H.

PY - 1998

Y1 - 1998

N2 - Stressed Ge:Ga is currently the most suitable detector type for very low background operation in the 115 to 200 micrometers range. Nonetheless, substantial advances have been required to develop stressed Ge:Ga detectors that work at the background limit in SIRTF. Both dark current and read noise have been improved significantly for the SIRTF devices. The design also takes account of space flight requirements such as the necessity to anneal the focal plane thermally using a minimum of cryogenic power dissipation, and the desire that any failures not propagate through an entire focal plane. The SIRTF 2 X 20 pixel focal plane will have dark current of about 200 e/s, read noise of 100 e rms, and responsivity > 7 A/W. As a result, even in the darkest parts of the sky, it will reach the background limit in less than 4 seconds of integration.

AB - Stressed Ge:Ga is currently the most suitable detector type for very low background operation in the 115 to 200 micrometers range. Nonetheless, substantial advances have been required to develop stressed Ge:Ga detectors that work at the background limit in SIRTF. Both dark current and read noise have been improved significantly for the SIRTF devices. The design also takes account of space flight requirements such as the necessity to anneal the focal plane thermally using a minimum of cryogenic power dissipation, and the desire that any failures not propagate through an entire focal plane. The SIRTF 2 X 20 pixel focal plane will have dark current of about 200 e/s, read noise of 100 e rms, and responsivity > 7 A/W. As a result, even in the darkest parts of the sky, it will reach the background limit in less than 4 seconds of integration.

KW - Detectors

KW - Infrared

KW - MIPS

KW - SIRTF

UR - http://www.scopus.com/inward/record.url?scp=60949113102&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=60949113102&partnerID=8YFLogxK

U2 - 10.1117/12.317318

DO - 10.1117/12.317318

M3 - Conference article

AN - SCOPUS:60949113102

SN - 0277-786X

VL - 3354

SP - 322

EP - 331

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Infrared Astronomical Instrumentation

Y2 - 23 March 1998 through 23 March 1998

ER -

Design of the stressed Ge:Ga far-infrared array for SIRTF

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this