Design approach and comparison of projection cameras for EUV lithography

Scott A. Lerner; Jose M. Sasian; Michael R. Descour

doi:10.1117/1.602429

Design approach and comparison of projection cameras for EUV lithography

Scott A. Lerner
, Jose M. Sasian
, Michael R. Descour

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

This paper presents an approach to designing all-reflective, projection cameras for EUV lithography. We make a comparison of four-mirror cameras with numerical apertures ranging from 0.1 to 0.2 and ring-field widths from 1.0 to 3.6 mm. Additionally, we present two theoretical models that allow for the phase change introduced by multilayer coatings.

Original language	English (US)
Pages (from-to)	792-802
Number of pages	11
Journal	Optical Engineering
Volume	39
Issue number	3
DOIs	https://doi.org/10.1117/1.602429
State	Published - Mar 2000

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
General Engineering

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title = "Design approach and comparison of projection cameras for EUV lithography",

abstract = "This paper presents an approach to designing all-reflective, projection cameras for EUV lithography. We make a comparison of four-mirror cameras with numerical apertures ranging from 0.1 to 0.2 and ring-field widths from 1.0 to 3.6 mm. Additionally, we present two theoretical models that allow for the phase change introduced by multilayer coatings.",

author = "Lerner, \{Scott A.\} and Sasian, \{Jose M.\} and Descour, \{Michael R.\}",

year = "2000",

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pages = "792--802",

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T1 - Design approach and comparison of projection cameras for EUV lithography

AU - Lerner, Scott A.

AU - Sasian, Jose M.

AU - Descour, Michael R.

PY - 2000/3

Y1 - 2000/3

N2 - This paper presents an approach to designing all-reflective, projection cameras for EUV lithography. We make a comparison of four-mirror cameras with numerical apertures ranging from 0.1 to 0.2 and ring-field widths from 1.0 to 3.6 mm. Additionally, we present two theoretical models that allow for the phase change introduced by multilayer coatings.

AB - This paper presents an approach to designing all-reflective, projection cameras for EUV lithography. We make a comparison of four-mirror cameras with numerical apertures ranging from 0.1 to 0.2 and ring-field widths from 1.0 to 3.6 mm. Additionally, we present two theoretical models that allow for the phase change introduced by multilayer coatings.

UR - https://www.scopus.com/pages/publications/0033750160

UR - https://www.scopus.com/pages/publications/0033750160#tab=citedBy

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SN - 0091-3286

VL - 39

SP - 792

EP - 802

JO - Optical Engineering

JF - Optical Engineering

IS - 3

ER -

Design approach and comparison of projection cameras for EUV lithography

Abstract

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