Abstract
Integrated receivers associating an amplifier with a photodiode increases the detector sensitivity. During this work, we have designed and characterized the FET amplifier. The field-effect transistor JFET has been fabricated on a GaAs semi-insulating substrate using liquid phase epitaxy. The structure involved two epitaxial layers of n-GaAs for the channel and GaAlAs for the gate. The design, the technology process and the current-voltage characteristics are described. A transconductance values over 10 mA/V has been achieved and the transistor have shown a threshold voltage of 4. 6 V. The previous results will be applied to two kinds of structures: FET devices without the detector and for the amplifier integrating the photodiode. The various devices have been characterized and analysed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 479-484 |
| Number of pages | 6 |
| Journal | Le Vide, les couches minces |
| Volume | 42 |
| Issue number | 239 |
| State | Published - Nov 1987 |
| Externally published | Yes |
ASJC Scopus subject areas
- General Engineering