Abstract
Deposition parameters for reactive sputtering of thin films of MoO3 and NiMoO4 were examined with an emphasis of the effect of temperature, O2/Ar flow rate, pressure, and sputtering power (RF source) or voltage (DC source). Films of α- and β-MoO3 could be produced having oriented structures. α-NiMoO4 could only be formed as a multicrystalline film at higher temperatures. Multilayer films of NiMoO4 on α-MoO3 were found to include an interfacial material identified as β-NiMoO4. This metastable material was detected at relatively low temperatures in the bilayer structures.
Original language | English (US) |
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Pages (from-to) | 52-62 |
Number of pages | 11 |
Journal | Thin Solid Films |
Volume | 324 |
Issue number | 1-2 |
DOIs | |
State | Published - Jul 1 1998 |
Keywords
- Deposition
- Molybdate thin films
- Reactive sputtering
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry