Dephasing in the gain region of II-VI semiconductor nanocrystals

H. Giessen; B. Fluegel; G. Mohs; Y. Z. Hu; N. Peyghambarian; U. Woggon; C. Klingshirn; P. Thomas; S. W. Koch

doi:10.1364/JOSAB.13.001039

Dephasing in the gain region of II-VI semiconductor nanocrystals

H. Giessen, B. Fluegel, G. Mohs, Y. Z. Hu, N. Peyghambarian, U. Woggon, C. Klingshirn, P. Thomas, S. W. Koch

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We investigate the dephasing times in highly excited CdSe and CdS_0.3Se_0.7 nanocrystals by spectral hole burning throughout the gain region. The energy dependence of the dephasing time T₂ is compared between quantum dots in the strong-confinement regime and bulklike microcrystals. T₂ in strongly confined quantum dots remains rather constant, whereas the bulklike sample shows a continuous increase of T₂ toward the transparency point. This observation is attributed to the different gain mechanisms in the strong and the weak quantum-confinement regimes.

Original language	English (US)
Pages (from-to)	1039-1044
Number of pages	6
Journal	Journal of the Optical Society of America B: Optical Physics
Volume	13
Issue number	5
DOIs	https://doi.org/10.1364/JOSAB.13.001039
State	Published - May 1996

ASJC Scopus subject areas

Statistical and Nonlinear Physics
Atomic and Molecular Physics, and Optics

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title = "Dephasing in the gain region of II-VI semiconductor nanocrystals",

abstract = "We investigate the dephasing times in highly excited CdSe and CdS0.3Se0.7 nanocrystals by spectral hole burning throughout the gain region. The energy dependence of the dephasing time T2 is compared between quantum dots in the strong-confinement regime and bulklike microcrystals. T2 in strongly confined quantum dots remains rather constant, whereas the bulklike sample shows a continuous increase of T2 toward the transparency point. This observation is attributed to the different gain mechanisms in the strong and the weak quantum-confinement regimes.",

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T1 - Dephasing in the gain region of II-VI semiconductor nanocrystals

AU - Giessen, H.

AU - Fluegel, B.

AU - Mohs, G.

AU - Hu, Y. Z.

AU - Peyghambarian, N.

AU - Woggon, U.

AU - Klingshirn, C.

AU - Thomas, P.

AU - Koch, S. W.

PY - 1996/5

Y1 - 1996/5

N2 - We investigate the dephasing times in highly excited CdSe and CdS0.3Se0.7 nanocrystals by spectral hole burning throughout the gain region. The energy dependence of the dephasing time T2 is compared between quantum dots in the strong-confinement regime and bulklike microcrystals. T2 in strongly confined quantum dots remains rather constant, whereas the bulklike sample shows a continuous increase of T2 toward the transparency point. This observation is attributed to the different gain mechanisms in the strong and the weak quantum-confinement regimes.

AB - We investigate the dephasing times in highly excited CdSe and CdS0.3Se0.7 nanocrystals by spectral hole burning throughout the gain region. The energy dependence of the dephasing time T2 is compared between quantum dots in the strong-confinement regime and bulklike microcrystals. T2 in strongly confined quantum dots remains rather constant, whereas the bulklike sample shows a continuous increase of T2 toward the transparency point. This observation is attributed to the different gain mechanisms in the strong and the weak quantum-confinement regimes.

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JF - Journal of the Optical Society of America B: Optical Physics

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Dephasing in the gain region of II-VI semiconductor nanocrystals

Abstract

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