Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters

J. Hader; J. V. Moloney; S. W. Koch

doi:10.1109/CLEOE.2011.5942578

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters

J. Hader, J. V. Moloney, S. W. Koch

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

The droop of the internal efficiency in GaN-based light emitting devices reflects a carrier loss mechanism that has a stronger dependence on the intrinsic carrier density than the about quadratic dependence of the radiative recombinations. Here we discuss density-activated defect recombination (DADR) [1] as a possible source for this non-radiative loss - at least for the low to medium density regime.

Original language	English (US)
Title of host publication	2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
DOIs	https://doi.org/10.1109/CLEOE.2011.5942578
State	Published - 2011
Event	2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 - Munich, Germany Duration: May 22 2011 → May 26 2011

Publication series

Name	2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011

Other

Other	2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
Country/Territory	Germany
City	Munich
Period	5/22/11 → 5/26/11

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/CLEOE.2011.5942578

Cite this

Hader, J., Moloney, J. V., & Koch, S. W. (2011). Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters. In 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 Article 5942578 (2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011). https://doi.org/10.1109/CLEOE.2011.5942578

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters. / Hader, J.; Moloney, J. V.; Koch, S. W.
2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011. 2011. 5942578 (2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hader, J , Moloney, JV & Koch, SW 2011, Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters. in 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011., 5942578, 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011, 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011, Munich, Germany, 5/22/11. https://doi.org/10.1109/CLEOE.2011.5942578

Hader J , Moloney JV , Koch SW. Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters. In 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011. 2011. 5942578. (2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011). doi: 10.1109/CLEOE.2011.5942578

Hader, J. ; Moloney, J. V. ; Koch, S. W. / Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters. 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011. 2011. (2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011).

@inproceedings{31317c54bcfa49b59264fd674c9edf09,

title = "Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters",

abstract = "The droop of the internal efficiency in GaN-based light emitting devices reflects a carrier loss mechanism that has a stronger dependence on the intrinsic carrier density than the about quadratic dependence of the radiative recombinations. Here we discuss density-activated defect recombination (DADR) [1] as a possible source for this non-radiative loss - at least for the low to medium density regime.",

author = "J. Hader and Moloney, {J. V.} and Koch, {S. W.}",

year = "2011",

doi = "10.1109/CLEOE.2011.5942578",

language = "English (US)",

isbn = "9781457705335",

series = "2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011",

booktitle = "2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011",

note = "2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 ; Conference date: 22-05-2011 Through 26-05-2011",

}

TY - GEN

T1 - Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters

AU - Hader, J.

AU - Moloney, J. V.

AU - Koch, S. W.

PY - 2011

Y1 - 2011

N2 - The droop of the internal efficiency in GaN-based light emitting devices reflects a carrier loss mechanism that has a stronger dependence on the intrinsic carrier density than the about quadratic dependence of the radiative recombinations. Here we discuss density-activated defect recombination (DADR) [1] as a possible source for this non-radiative loss - at least for the low to medium density regime.

AB - The droop of the internal efficiency in GaN-based light emitting devices reflects a carrier loss mechanism that has a stronger dependence on the intrinsic carrier density than the about quadratic dependence of the radiative recombinations. Here we discuss density-activated defect recombination (DADR) [1] as a possible source for this non-radiative loss - at least for the low to medium density regime.

UR - http://www.scopus.com/inward/record.url?scp=80052290160&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052290160&partnerID=8YFLogxK

U2 - 10.1109/CLEOE.2011.5942578

DO - 10.1109/CLEOE.2011.5942578

M3 - Conference contribution

AN - SCOPUS:80052290160

SN - 9781457705335

T3 - 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011

BT - 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011

T2 - 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011

Y2 - 22 May 2011 through 26 May 2011

ER -

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters

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