Demonstration of 3.5 μm Ga1-xInxSb/InAs super lattice diode laser

T. C. Hasenberg; D. H. Chow; A. R. Kost; R. H. Miles; L. West

doi:10.1049/el:19950221

Demonstration of 3.5 μm Ga_1-xIn_xSb/InAs super lattice diode laser

T. C. Hasenberg
, D. H. Chow
, A. R. Kost
, R. H. Miles
, L. West

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

A demonstration of a semiconductor diode laser based on a type-II Ga_1-xIn_xSb/InAs superlattice active layer is reported. The laser structure uses InAs/AlSb superlattice cladding layers and a multiquantum well active layer with GalnAsSb barriers and Ga_1-xIn_xSb/InAs-superlattice wells. An emission wavelength of 3.47μm for pulsed operation up to 160K is observed.

Original language	English (US)
Pages (from-to)	275-276
Number of pages	2
Journal	Electronics Letters
Volume	31
Issue number	4
DOIs	https://doi.org/10.1049/el:19950221
State	Published - Feb 16 1995
Externally published	Yes

Keywords

Semiconductor junction lasers
Semiconductor superlattices

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19950221

Cite this

@article{15e80e38cf124f468055a4d40cbd6bb0,

title = "Demonstration of 3.5 μm Ga1-xInxSb/InAs super lattice diode laser",

abstract = "A demonstration of a semiconductor diode laser based on a type-II Ga1-xInxSb/InAs superlattice active layer is reported. The laser structure uses InAs/AlSb superlattice cladding layers and a multiquantum well active layer with GalnAsSb barriers and Ga1-xInxSb/InAs-superlattice wells. An emission wavelength of 3.47μm for pulsed operation up to 160K is observed.",

keywords = "Semiconductor junction lasers, Semiconductor superlattices",

author = "Hasenberg, \{T. C.\} and Chow, \{D. H.\} and Kost, \{A. R.\} and Miles, \{R. H.\} and L. West",

year = "1995",

month = feb,

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doi = "10.1049/el:19950221",

language = "English (US)",

volume = "31",

pages = "275--276",

journal = "Electronics Letters",

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publisher = "John Wiley \& Sons Inc.",

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TY - JOUR

T1 - Demonstration of 3.5 μm Ga1-xInxSb/InAs super lattice diode laser

AU - Hasenberg, T. C.

AU - Chow, D. H.

AU - Kost, A. R.

AU - Miles, R. H.

AU - West, L.

PY - 1995/2/16

Y1 - 1995/2/16

N2 - A demonstration of a semiconductor diode laser based on a type-II Ga1-xInxSb/InAs superlattice active layer is reported. The laser structure uses InAs/AlSb superlattice cladding layers and a multiquantum well active layer with GalnAsSb barriers and Ga1-xInxSb/InAs-superlattice wells. An emission wavelength of 3.47μm for pulsed operation up to 160K is observed.

AB - A demonstration of a semiconductor diode laser based on a type-II Ga1-xInxSb/InAs superlattice active layer is reported. The laser structure uses InAs/AlSb superlattice cladding layers and a multiquantum well active layer with GalnAsSb barriers and Ga1-xInxSb/InAs-superlattice wells. An emission wavelength of 3.47μm for pulsed operation up to 160K is observed.

KW - Semiconductor junction lasers

KW - Semiconductor superlattices

UR - https://www.scopus.com/pages/publications/0029253732

UR - https://www.scopus.com/pages/publications/0029253732#tab=citedBy

U2 - 10.1049/el:19950221

DO - 10.1049/el:19950221

M3 - Article

AN - SCOPUS:0029253732

SN - 0013-5194

VL - 31

SP - 275

EP - 276

JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -