Abstract
A demonstration of a semiconductor diode laser based on a type-II Ga1-xInxSb/InAs superlattice active layer is reported. The laser structure uses InAs/AlSb superlattice cladding layers and a multiquantum well active layer with GalnAsSb barriers and Ga1-xInxSb/InAs-superlattice wells. An emission wavelength of 3.47μm for pulsed operation up to 160K is observed.
Original language | English (US) |
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Pages (from-to) | 275-276 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 31 |
Issue number | 4 |
DOIs | |
State | Published - Feb 16 1995 |
Externally published | Yes |
Keywords
- Semiconductor junction lasers
- Semiconductor superlattices
ASJC Scopus subject areas
- Electrical and Electronic Engineering