A demonstration of a semiconductor diode laser based on a type-II Ga1-xInxSb/InAs superlattice active layer is reported. The laser structure uses InAs/AlSb superlattice cladding layers and a multiquantum well active layer with GalnAsSb barriers and Ga1-xInxSb/InAs-superlattice wells. An emission wavelength of 3.47μm for pulsed operation up to 160K is observed.
- Semiconductor junction lasers
- Semiconductor superlattices
ASJC Scopus subject areas
- Electrical and Electronic Engineering