Demonstration of 3.5 μm Ga1-xInxSb/InAs super lattice diode laser

T. C. Hasenberg, D. H. Chow, A. R. Kost, R. H. Miles, L. West

Research output: Contribution to journalArticlepeer-review

61 Scopus citations


A demonstration of a semiconductor diode laser based on a type-II Ga1-xInxSb/InAs superlattice active layer is reported. The laser structure uses InAs/AlSb superlattice cladding layers and a multiquantum well active layer with GalnAsSb barriers and Ga1-xInxSb/InAs-superlattice wells. An emission wavelength of 3.47μm for pulsed operation up to 160K is observed.

Original languageEnglish (US)
Pages (from-to)275-276
Number of pages2
JournalElectronics Letters
Issue number4
StatePublished - Feb 16 1995
Externally publishedYes


  • Semiconductor junction lasers
  • Semiconductor superlattices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


Dive into the research topics of 'Demonstration of 3.5 μm Ga1-xInxSb/InAs super lattice diode laser'. Together they form a unique fingerprint.

Cite this