Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction

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45 Scopus citations

Abstract

The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties.

Original languageEnglish (US)
Pages (from-to)4711-4716
Number of pages6
JournalAdvanced Materials
Volume26
Issue number27
DOIs
StatePublished - Jul 16 2014

Keywords

  • PTCDI
  • ZnO
  • interfacial electronic structure
  • organic semiconductor
  • surface defects

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

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