Abstract
The recent advent of Chemical Mechanical Planarization (CMP) as a major process technology has a significant impact on the semiconductor industry. Oxide CMP is a technology enabler for logic and dynamic random access storage (DRAM) devices with feature sizes less than or equal to 0.75 micrometer. A unique feature of the CMP module, is that pads and slurries have complex interactions with one another as well as with various components of the polishing equipment, process and wafer product set. This has led to the development of consumables formulated specifically to provide optimum performance for a given equipment and integrated circuit product-set.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 243-249 |
| Number of pages | 7 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 427 |
| DOIs | |
| State | Published - 1996 |
| Event | Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering