Correlation of optical luminescence with radiation hardness in doped LiNbO 3 crystals

William J. Thomes, Kelly Simmons-Potter, Barrett G. Potter, Louis S. Weichman

Research output: Contribution to journalConference articlepeer-review


Transient ionizing radiation fields have been observed to cause substantial optical loss in undoped LiNbO 3 crystals operating at 1.06 microns. This loss is slow to recover and makes the selection of this material for Q-switch applications in radiation environments unfeasible. We have studied the effects of Mg doping on the radiation response of LiNbO 3 crystals and have investigated the optical luminescence of doped and undoped samples. Our results indicate a strong correlation between crystal defects, formed primarily during crystal growth, and the radiation-induced optical loss exhibited by these materials. These findings have enabled us to produce radiation-hard LiNbO 3 crystals for use in high gamma-field environments.

Original languageEnglish (US)
Article numberNN7.3
Pages (from-to)301-306
Number of pages6
JournalMaterials Research Society Symposium Proceedings
StatePublished - 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2004Dec 3 2004

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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