Abstract
We demonstrate improved performance in tunable distributed-Bragg-reflector lasers using GalnAs/GalnAsP multiple-quantum-well active layers. We observe linewidths as low as 1-9 MHz, differential quantum efficiencies as large as 33%/front facet at 1-5µm, and rapid electronic access to all frequencies throughout a 1000 GHz range. Indexing term : Semiconductor lasers.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1431-1433 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 24 |
| Issue number | 23 |
| DOIs | |
| State | Published - 1988 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering