Continuously Tunable 1-5&mu m Multiple-Quantum-Well GalnAs/GalnAsP Distributed-Bragg-Reflector Lasers

T. L. Koch; U. Koren; R. P. Gnall; C. A. Burrus; B. I. Miller

doi:10.1049/el:19880978

Continuously Tunable 1-5&mu m Multiple-Quantum-Well GalnAs/GalnAsP Distributed-Bragg-Reflector Lasers

T. L. Koch, U. Koren, R. P. Gnall, C. A. Burrus, B. I. Miller

Research output: Contribution to journal › Article › peer-review

134 Scopus citations

Abstract

We demonstrate improved performance in tunable distributed-Bragg-reflector lasers using GalnAs/GalnAsP multiple-quantum-well active layers. We observe linewidths as low as 1-9 MHz, differential quantum efficiencies as large as 33%/front facet at 1-5µm, and rapid electronic access to all frequencies throughout a 1000 GHz range. Indexing term : Semiconductor lasers.

Original language	English (US)
Pages (from-to)	1431-1433
Number of pages	3
Journal	Electronics Letters
Volume	24
Issue number	23
DOIs	https://doi.org/10.1049/el:19880978
State	Published - 1988
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19880978

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title = "Continuously Tunable 1-5&mu m Multiple-Quantum-Well GalnAs/GalnAsP Distributed-Bragg-Reflector Lasers",

abstract = "We demonstrate improved performance in tunable distributed-Bragg-reflector lasers using GalnAs/GalnAsP multiple-quantum-well active layers. We observe linewidths as low as 1-9 MHz, differential quantum efficiencies as large as 33%/front facet at 1-5µm, and rapid electronic access to all frequencies throughout a 1000 GHz range. Indexing term : Semiconductor lasers.",

author = "Koch, {T. L.} and U. Koren and Gnall, {R. P.} and Burrus, {C. A.} and Miller, {B. I.}",

year = "1988",

doi = "10.1049/el:19880978",

language = "English (US)",

volume = "24",

pages = "1431--1433",

journal = "Electronics Letters",

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publisher = "John Wiley & Sons Inc.",

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T1 - Continuously Tunable 1-5&mu m Multiple-Quantum-Well GalnAs/GalnAsP Distributed-Bragg-Reflector Lasers

AU - Koch, T. L.

AU - Koren, U.

AU - Gnall, R. P.

AU - Burrus, C. A.

AU - Miller, B. I.

PY - 1988

Y1 - 1988

N2 - We demonstrate improved performance in tunable distributed-Bragg-reflector lasers using GalnAs/GalnAsP multiple-quantum-well active layers. We observe linewidths as low as 1-9 MHz, differential quantum efficiencies as large as 33%/front facet at 1-5µm, and rapid electronic access to all frequencies throughout a 1000 GHz range. Indexing term : Semiconductor lasers.

AB - We demonstrate improved performance in tunable distributed-Bragg-reflector lasers using GalnAs/GalnAsP multiple-quantum-well active layers. We observe linewidths as low as 1-9 MHz, differential quantum efficiencies as large as 33%/front facet at 1-5µm, and rapid electronic access to all frequencies throughout a 1000 GHz range. Indexing term : Semiconductor lasers.

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DO - 10.1049/el:19880978

M3 - Article

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JF - Electronics Letters

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ER -

Continuously Tunable 1-5&mu m Multiple-Quantum-Well GalnAs/GalnAsP Distributed-Bragg-Reflector Lasers

Abstract

ASJC Scopus subject areas

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