Abstract
Up to 136 mW of cw single-frequency output at 295 nm was obtained from a frequency-quadrupled optically pumped semiconductor laser. The highly strained InGaAs quantum-well semiconductor laser operates at 1178 nm in a single frequency. The single-frequency intracavity-doubled 589 nm output is further converted to 295 nm in an external resonator using β-BaB2O 4.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3511-3513 |
| Number of pages | 3 |
| Journal | Optics letters |
| Volume | 34 |
| Issue number | 22 |
| DOIs | |
| State | Published - 2009 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
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