Continuous-wave room-temperature operation of 2-μm sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates

Thomas J. Rotter; Jun Tatebayashi; Pradeep Senanayake; Ganesh Balakrishnan; Marcel Rattunde; Joachim Wagner; Jörg Hader; Jerome V. Moloney; Stephan W. Koch; L. Ralph Dawson; Diana L. Huffaker

doi:10.1143/APEX.2.112102

Continuous-wave room-temperature operation of 2-μm sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates

Thomas J. Rotter
, Jun Tatebayashi
, Pradeep Senanayake
, Ganesh Balakrishnan
, Marcel Rattunde
, Joachim Wagner
, Jörg Hader
, Jerome V. Moloney
, Stephan W. Koch
, L. Ralph Dawson
, Diana L. Huffaker

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report on continuous-wave room-temperature operation at 2.014 μm of Sb-based optically-pumped vertically-external-cavity surface-emitting lasers monolithically grown on GaAs substrates by using an interfacial misfit (IMF) growth mode. The IMF is characterized by a periodic array of 90° misfit dislocation and enables the relaxed GaSb growth with a low dislocation density on lattice-mismatched GaAs after the growth of only a few monolayers of GaSb. A maximum output power of >100 mW is obtained at -5°C.

Original language	English (US)
Article number	112102
Journal	Applied Physics Express
Volume	2
Issue number	11
DOIs	https://doi.org/10.1143/APEX.2.112102
State	Published - Nov 2009

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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Rotter, T. J., Tatebayashi, J., Senanayake, P., Balakrishnan, G., Rattunde, M., Wagner, J., Hader, J., Moloney, J. V., Koch, S. W., Dawson, L. R., & Huffaker, D. L. (2009). Continuous-wave room-temperature operation of 2-μm sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates. Applied Physics Express, 2(11), Article 112102. https://doi.org/10.1143/APEX.2.112102

Rotter, TJ, Tatebayashi, J, Senanayake, P, Balakrishnan, G, Rattunde, M, Wagner, J, Hader, J , Moloney, JV , Koch, SW, Dawson, LR & Huffaker, DL 2009, 'Continuous-wave room-temperature operation of 2-μm sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates', Applied Physics Express, vol. 2, no. 11, 112102. https://doi.org/10.1143/APEX.2.112102

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title = "Continuous-wave room-temperature operation of 2-μm sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates",

abstract = "We report on continuous-wave room-temperature operation at 2.014 μm of Sb-based optically-pumped vertically-external-cavity surface-emitting lasers monolithically grown on GaAs substrates by using an interfacial misfit (IMF) growth mode. The IMF is characterized by a periodic array of 90° misfit dislocation and enables the relaxed GaSb growth with a low dislocation density on lattice-mismatched GaAs after the growth of only a few monolayers of GaSb. A maximum output power of >100 mW is obtained at -5°C.",

author = "Rotter, \{Thomas J.\} and Jun Tatebayashi and Pradeep Senanayake and Ganesh Balakrishnan and Marcel Rattunde and Joachim Wagner and J{\"o}rg Hader and Moloney, \{Jerome V.\} and Koch, \{Stephan W.\} and Dawson, \{L. Ralph\} and Huffaker, \{Diana L.\}",

year = "2009",

month = nov,

doi = "10.1143/APEX.2.112102",

language = "English (US)",

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AU - Rotter, Thomas J.

AU - Tatebayashi, Jun

AU - Senanayake, Pradeep

AU - Balakrishnan, Ganesh

AU - Rattunde, Marcel

AU - Wagner, Joachim

AU - Hader, Jörg

AU - Moloney, Jerome V.

AU - Koch, Stephan W.

AU - Dawson, L. Ralph

AU - Huffaker, Diana L.

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AB - We report on continuous-wave room-temperature operation at 2.014 μm of Sb-based optically-pumped vertically-external-cavity surface-emitting lasers monolithically grown on GaAs substrates by using an interfacial misfit (IMF) growth mode. The IMF is characterized by a periodic array of 90° misfit dislocation and enables the relaxed GaSb growth with a low dislocation density on lattice-mismatched GaAs after the growth of only a few monolayers of GaSb. A maximum output power of >100 mW is obtained at -5°C.

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Continuous-wave room-temperature operation of 2-μm sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates

Abstract

ASJC Scopus subject areas

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