Continuous-wave room-temperature operation of 2-μm sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates

Thomas J. Rotter; Jun Tatebayashi; Pradeep Senanayake; Ganesh Balakrishnan; Marcel Rattunde; Joachim Wagner; Jörg Hader; Jerome V. Moloney; Stephan W. Koch; L. Ralph Dawson; Diana L. Huffaker

doi:10.1143/APEX.2.112102

Continuous-wave room-temperature operation of 2-μm sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates

Thomas J. Rotter, Jun Tatebayashi, Pradeep Senanayake, Ganesh Balakrishnan, Marcel Rattunde, Joachim Wagner, Jörg Hader, Jerome V. Moloney, Stephan W. Koch, L. Ralph Dawson, Diana L. Huffaker

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14 Scopus citations

Abstract

We report on continuous-wave room-temperature operation at 2.014 μm of Sb-based optically-pumped vertically-external-cavity surface-emitting lasers monolithically grown on GaAs substrates by using an interfacial misfit (IMF) growth mode. The IMF is characterized by a periodic array of 90° misfit dislocation and enables the relaxed GaSb growth with a low dislocation density on lattice-mismatched GaAs after the growth of only a few monolayers of GaSb. A maximum output power of >100 mW is obtained at -5°C.

Original language	English (US)
Article number	112102
Journal	Applied Physics Express
Volume	2
Issue number	11
DOIs	https://doi.org/10.1143/APEX.2.112102
State	Published - Nov 2009

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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Rotter, T. J., Tatebayashi, J., Senanayake, P., Balakrishnan, G., Rattunde, M., Wagner, J., Hader, J., Moloney, J. V., Koch, S. W., Dawson, L. R., & Huffaker, D. L. (2009). Continuous-wave room-temperature operation of 2-μm sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates. Applied Physics Express, 2(11), Article 112102. https://doi.org/10.1143/APEX.2.112102

Rotter, TJ, Tatebayashi, J, Senanayake, P, Balakrishnan, G, Rattunde, M, Wagner, J, Hader, J , Moloney, JV , Koch, SW, Dawson, LR & Huffaker, DL 2009, 'Continuous-wave room-temperature operation of 2-μm sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates', Applied Physics Express, vol. 2, no. 11, 112102. https://doi.org/10.1143/APEX.2.112102

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abstract = "We report on continuous-wave room-temperature operation at 2.014 μm of Sb-based optically-pumped vertically-external-cavity surface-emitting lasers monolithically grown on GaAs substrates by using an interfacial misfit (IMF) growth mode. The IMF is characterized by a periodic array of 90° misfit dislocation and enables the relaxed GaSb growth with a low dislocation density on lattice-mismatched GaAs after the growth of only a few monolayers of GaSb. A maximum output power of >100 mW is obtained at -5°C.",

author = "Rotter, {Thomas J.} and Jun Tatebayashi and Pradeep Senanayake and Ganesh Balakrishnan and Marcel Rattunde and Joachim Wagner and J{\"o}rg Hader and Moloney, {Jerome V.} and Koch, {Stephan W.} and Dawson, {L. Ralph} and Huffaker, {Diana L.}",

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doi = "10.1143/APEX.2.112102",

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AU - Rotter, Thomas J.

AU - Tatebayashi, Jun

AU - Senanayake, Pradeep

AU - Balakrishnan, Ganesh

AU - Rattunde, Marcel

AU - Wagner, Joachim

AU - Hader, Jörg

AU - Moloney, Jerome V.

AU - Koch, Stephan W.

AU - Dawson, L. Ralph

AU - Huffaker, Diana L.

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AB - We report on continuous-wave room-temperature operation at 2.014 μm of Sb-based optically-pumped vertically-external-cavity surface-emitting lasers monolithically grown on GaAs substrates by using an interfacial misfit (IMF) growth mode. The IMF is characterized by a periodic array of 90° misfit dislocation and enables the relaxed GaSb growth with a low dislocation density on lattice-mismatched GaAs after the growth of only a few monolayers of GaSb. A maximum output power of >100 mW is obtained at -5°C.

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Continuous-wave room-temperature operation of 2-μm sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates

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