@inproceedings{e4c129da8aa4494ba68a4332b38977db,
title = "Contamination and cleaning of oxide areas exposed during copper CMP in hydroxylamine based slurries",
abstract = "Copper contamination of oxide areas that may occur during the chemical mechanical planarization of copper based structures using hydroxylamiane based slurries has been investigated. The results indicate low levels of copper contamination that is easily removable using a D1 water brush cleaning technique. A mechanism for copper contamination has been proposed through the construction of potential-pH diagrams.",
keywords = "Chemical mechanical planarization, Contamination, Copper (Cu), Hydroxylamine",
author = "C. Shang and W. Huang and S. Raghavan and Z. Chen and R. Small and M. Peterson and J. Jeon",
note = "Publisher Copyright: {\textcopyright} (2001) Trans Tech Publications, Switzerland.; 5th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2000 ; Conference date: 18-09-2000 Through 20-09-2000",
year = "2001",
doi = "10.4028/www.scientific.net/SSP.76-77.295",
language = "English (US)",
isbn = "9783908450573",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "295--298",
editor = "Marc Heyns and Paul Mertens and Marc Meuris",
booktitle = "Ultra Clean Processing of Silicon Surfaces 2000",
}