Abstract
Copper contamination of oxide areas that may occur during the chemical mechanical planarization of copper based structures using hydroxylamiane based slurries has been investigated. The results indicate low levels of copper contamination that is easily removable using a DI water brush cleaning technique. A mechanism for copper contamination has been proposed through the construction of potential-pH diagrams.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 295-298 |
| Number of pages | 4 |
| Journal | Diffusion and Defect Data Pt.B: Solid State Phenomena |
| Volume | 76-77 |
| State | Published - 2000 |
| Event | 5th Internatinal Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000) - Ostend, Belgium Duration: Sep 18 2000 → Sep 20 2000 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Materials Science
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)