Computer simulations of transient operation of gaas etalons

M. E. Warren, D. Richardson, S. W. Koch, H. M. Gibbs

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Time-dependent behavior of GaAs nonlinear Fabry-Perot etalons has been investigated with a computer model using the Banyai-Koch plasma theory for the GaAs nonlinear optical properties. Investigation of single-wavelength transient operation of GaAs etalons as optical logic gates has shown that useful differential energy gain is not achievable for optical pulses shorter than about ten times the charge carrier lifetime in the semiconductor.

Original languageEnglish (US)
Pages (from-to)49-53
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - May 3 1988

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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