Abstract
A CdTe PC-AlGaAs/GaAs FET OEIC has been fabricated for the first time. The compatibility of such an integration is shown. Such an integration permits the use of high-quality optical compounds with performance electronic materials. A responsivity of 30 A/W at 0.77 μm has been obtained for integrated circuits. This integration opens a new perspective in heterostructure infrared OEICs.
Original language | English (US) |
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Pages (from-to) | 1245-1246 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 24 |
Issue number | 19 |
DOIs | |
State | Published - 1988 |
Externally published | Yes |
Keywords
- Field-effect transistors
- Heterostructure integrated optics
- Optoelectronics
- Photoconducting devices
ASJC Scopus subject areas
- Electrical and Electronic Engineering