Comparison of the chemical passivation of GaAs, In0.53Ga0.47As, and InSb with 1-eicosanethiol

Yissel Contreras; Pablo Mancheno-Posso; Anthony J. Muscat

doi:10.4028/www.scientific.net/SSP.255.55

Comparison of the chemical passivation of GaAs, In_0.53Ga_0.47As, and InSb with 1-eicosanethiol

Yissel Contreras, Pablo Mancheno-Posso, Anthony J. Muscat

Chemical and Environmental Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Self-assembled 1-eicosanethiolate layers were deposited on the oxide-free (100) crystal planes of GaAs, In_0.53Ga_0.47As, and InSb to protect the surfaces. The layer prevented re-oxidation in air for 30 min on GaAs but only 8 min on In_0.53Ga_0.47As based on the O 1s x-ray photoelectron spectroscopy state. The layer protected InSb from reoxidation for only 4 min based on the O Auger state. Well-ordered monolayers formed on GaAs and In_0.53Ga_0.47As based on transmission Fourier transform infrared (FTIR) spectroscopy. A partially ordered layer was formed on InSb based on attenuated total reflection FTIR. The increased reoxidation rate of InGaAs and InSb is due to the larger lattice parameter of these surfaces and their In content, which forms weaker bonds to S, Ga, and Sb compared to Ga bonding to As and S.

Original language	English (US)
Title of host publication	Ultra Clean Processing of Semiconductor Surfaces XIII
Editors	Paul W. Mertens, Marc Meuris, Marc Meuris, Marc Heyns
Publisher	Trans Tech Publications Ltd
Pages	55-60
Number of pages	6
ISBN (Print)	9783035710847
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.255.55
State	Published - 2016
Event	13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces , UCPSS 2016 - Knokke, Belgium Duration: Sep 12 2016 → Sep 14 2016

Publication series

Name	Solid State Phenomena
Volume	255
ISSN (Print)	1012-0394
ISSN (Electronic)	1662-9779

Other

Other	13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces , UCPSS 2016
Country/Territory	Belgium
City	Knokke
Period	9/12/16 → 9/14/16

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
General Materials Science
Condensed Matter Physics

Access to Document

10.4028/www.scientific.net/SSP.255.55

Cite this

Contreras, Y., Mancheno-Posso, P., & Muscat, A. J. (2016). Comparison of the chemical passivation of GaAs, In_0.53Ga_0.47As, and InSb with 1-eicosanethiol. In P. W. Mertens, M. Meuris, M. Meuris, & M. Heyns (Eds.), Ultra Clean Processing of Semiconductor Surfaces XIII (pp. 55-60). (Solid State Phenomena; Vol. 255). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.255.55

Comparison of the chemical passivation of GaAs, In_0.53Ga_0.47As, and InSb with 1-eicosanethiol. / Contreras, Yissel; Mancheno-Posso, Pablo; Muscat, Anthony J.
Ultra Clean Processing of Semiconductor Surfaces XIII. ed. / Paul W. Mertens; Marc Meuris; Marc Meuris; Marc Heyns. Trans Tech Publications Ltd, 2016. p. 55-60 (Solid State Phenomena; Vol. 255).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Contreras, Y, Mancheno-Posso, P & Muscat, AJ 2016, Comparison of the chemical passivation of GaAs, In_0.53Ga_0.47As, and InSb with 1-eicosanethiol. in PW Mertens, M Meuris, M Meuris & M Heyns (eds), Ultra Clean Processing of Semiconductor Surfaces XIII. Solid State Phenomena, vol. 255, Trans Tech Publications Ltd, pp. 55-60, 13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces , UCPSS 2016, Knokke, Belgium, 9/12/16. https://doi.org/10.4028/www.scientific.net/SSP.255.55

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abstract = "Self-assembled 1-eicosanethiolate layers were deposited on the oxide-free (100) crystal planes of GaAs, In0.53Ga0.47As, and InSb to protect the surfaces. The layer prevented re-oxidation in air for 30 min on GaAs but only 8 min on In0.53Ga0.47As based on the O 1s x-ray photoelectron spectroscopy state. The layer protected InSb from reoxidation for only 4 min based on the O Auger state. Well-ordered monolayers formed on GaAs and In0.53Ga0.47As based on transmission Fourier transform infrared (FTIR) spectroscopy. A partially ordered layer was formed on InSb based on attenuated total reflection FTIR. The increased reoxidation rate of InGaAs and InSb is due to the larger lattice parameter of these surfaces and their In content, which forms weaker bonds to S, Ga, and Sb compared to Ga bonding to As and S.",

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AB - Self-assembled 1-eicosanethiolate layers were deposited on the oxide-free (100) crystal planes of GaAs, In0.53Ga0.47As, and InSb to protect the surfaces. The layer prevented re-oxidation in air for 30 min on GaAs but only 8 min on In0.53Ga0.47As based on the O 1s x-ray photoelectron spectroscopy state. The layer protected InSb from reoxidation for only 4 min based on the O Auger state. Well-ordered monolayers formed on GaAs and In0.53Ga0.47As based on transmission Fourier transform infrared (FTIR) spectroscopy. A partially ordered layer was formed on InSb based on attenuated total reflection FTIR. The increased reoxidation rate of InGaAs and InSb is due to the larger lattice parameter of these surfaces and their In content, which forms weaker bonds to S, Ga, and Sb compared to Ga bonding to As and S.

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