Abstract
Photorelaxation, photoexpansion and photodarkening measurements were performed during irradiation with CW and pulsed sub-bandgap light of Ge-Se glass. The kinetics and effect of irradiation appear to be mostly identical when irradiating with a CW or a low intensity, high repetition rate femtosecond laser. The entropy decrease observed during pulsed irradiation is inconsistent with the mechanism for patterning silicate glass with high intensity femtosecond lasers. Instead, the similarity between all photostructural change observed during CW and pulsed irradiation suggests that a high repetition rate femtosecond laser essentially acts as a CW laser when used at low intensity with a sub-bandgap wavelength on a chalcogenide glass. The only difference observed is due to the formation of interference fringes in the case of CW irradiation, which results in the formation of a Bragg reflector not observed with pulsed irradiation.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 776-779 |
| Number of pages | 4 |
| Journal | Journal of Optoelectronics and Advanced Materials |
| Volume | 8 |
| Issue number | 2 |
| State | Published - Apr 2006 |
Keywords
- Chalcogenide glass
- Laser writing
- Photostructural change
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering