Comparison of lifetime and threshold current damage factors for multi-quantum-well (MQW) GaAs/GaAlAs laser diodes irradiated at different proton energies

S. C. Lee; Y. F. Zhao; R. D. Schrimpf; M. A. Neifeld; K. F. Galloway

doi:10.1109/23.819156

Comparison of lifetime and threshold current damage factors for multi-quantum-well (MQW) GaAs/GaAlAs laser diodes irradiated at different proton energies

S. C. Lee, Y. F. Zhao, R. D. Schrimpf, M. A. Neifeld, K. F. Galloway

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Proton damage effects on multi-quantum-well (MQW) GaAs/GaAIAs laser diodes are studied using both current vs. voltage (I~V) and optical power vs. current (L~7) characteristics. The lifetime damage factor is calculated from 7-V characteristics and compared with the commonly used threshold current damage factor from L~/ characteristics. The lifetime damage factor is larger than the threshold current damage factor. This difference is explained by the different values of radiative lifetime when measuring the damage factors in the different operating regions. The two damage factors are compared at proton energies from 70 MeV to 200 MeV.

Original language	English (US)
Pages (from-to)	1797-1803
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	46
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/23.819156
State	Published - 1999

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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title = "Comparison of lifetime and threshold current damage factors for multi-quantum-well (MQW) GaAs/GaAlAs laser diodes irradiated at different proton energies",

abstract = "Proton damage effects on multi-quantum-well (MQW) GaAs/GaAIAs laser diodes are studied using both current vs. voltage (I~V) and optical power vs. current (L~7) characteristics. The lifetime damage factor is calculated from 7-V characteristics and compared with the commonly used threshold current damage factor from L~/ characteristics. The lifetime damage factor is larger than the threshold current damage factor. This difference is explained by the different values of radiative lifetime when measuring the damage factors in the different operating regions. The two damage factors are compared at proton energies from 70 MeV to 200 MeV.",

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AU - Lee, S. C.

AU - Zhao, Y. F.

AU - Schrimpf, R. D.

AU - Neifeld, M. A.

AU - Galloway, K. F.

PY - 1999

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N2 - Proton damage effects on multi-quantum-well (MQW) GaAs/GaAIAs laser diodes are studied using both current vs. voltage (I~V) and optical power vs. current (L~7) characteristics. The lifetime damage factor is calculated from 7-V characteristics and compared with the commonly used threshold current damage factor from L~/ characteristics. The lifetime damage factor is larger than the threshold current damage factor. This difference is explained by the different values of radiative lifetime when measuring the damage factors in the different operating regions. The two damage factors are compared at proton energies from 70 MeV to 200 MeV.

AB - Proton damage effects on multi-quantum-well (MQW) GaAs/GaAIAs laser diodes are studied using both current vs. voltage (I~V) and optical power vs. current (L~7) characteristics. The lifetime damage factor is calculated from 7-V characteristics and compared with the commonly used threshold current damage factor from L~/ characteristics. The lifetime damage factor is larger than the threshold current damage factor. This difference is explained by the different values of radiative lifetime when measuring the damage factors in the different operating regions. The two damage factors are compared at proton energies from 70 MeV to 200 MeV.

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Comparison of lifetime and threshold current damage factors for multi-quantum-well (MQW) GaAs/GaAlAs laser diodes irradiated at different proton energies

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