Comparison of contact designs for improved stability of broad area semiconductor lasers

A. R. Zakharian; J. V. Moloney

doi:10.1109/68.969881

Comparison of contact designs for improved stability of broad area semiconductor lasers

A. R. Zakharian, J. V. Moloney

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Patterned electrode designs are used to control optical mode shape in high-power semiconductor lasers by localizing current injection. In this letter, we present comparison of current density profiles in the active layer achieved by different contact designs. Single-voltage digitated contact, distributed regular and random Gaussian contact configurations are studied using numerical solutions of semiconductor device equations that govern electrostatic potential and carrier concentrations in three spatial dimensions. The results of our calculations indicate that lateral current profile is influenced by the contact shape in the transverse direction and the thickness of the junction on the contact side.

Original language	English (US)
Pages (from-to)	1280-1282
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	13
Issue number	12
DOIs	https://doi.org/10.1109/68.969881
State	Published - Dec 2001

Keywords

Current distribution
Numerical simulations
Semiconductor lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.969881

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title = "Comparison of contact designs for improved stability of broad area semiconductor lasers",

abstract = "Patterned electrode designs are used to control optical mode shape in high-power semiconductor lasers by localizing current injection. In this letter, we present comparison of current density profiles in the active layer achieved by different contact designs. Single-voltage digitated contact, distributed regular and random Gaussian contact configurations are studied using numerical solutions of semiconductor device equations that govern electrostatic potential and carrier concentrations in three spatial dimensions. The results of our calculations indicate that lateral current profile is influenced by the contact shape in the transverse direction and the thickness of the junction on the contact side.",

keywords = "Current distribution, Numerical simulations, Semiconductor lasers",

author = "Zakharian, {A. R.} and Moloney, {J. V.}",

note = "Funding Information: Manuscript received April 12, 2001; revised August 20, 2001. This work was supported in part by Air Force Office of Scientific Research under Contract F49620-00-1-0002 and Contract F49620-00-1-0190, and by the National Science Foundation, Division of Mathematical Sciences under Grant 9811466.",

year = "2001",

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doi = "10.1109/68.969881",

language = "English (US)",

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T1 - Comparison of contact designs for improved stability of broad area semiconductor lasers

AU - Zakharian, A. R.

AU - Moloney, J. V.

N1 - Funding Information: Manuscript received April 12, 2001; revised August 20, 2001. This work was supported in part by Air Force Office of Scientific Research under Contract F49620-00-1-0002 and Contract F49620-00-1-0190, and by the National Science Foundation, Division of Mathematical Sciences under Grant 9811466.

PY - 2001/12

Y1 - 2001/12

N2 - Patterned electrode designs are used to control optical mode shape in high-power semiconductor lasers by localizing current injection. In this letter, we present comparison of current density profiles in the active layer achieved by different contact designs. Single-voltage digitated contact, distributed regular and random Gaussian contact configurations are studied using numerical solutions of semiconductor device equations that govern electrostatic potential and carrier concentrations in three spatial dimensions. The results of our calculations indicate that lateral current profile is influenced by the contact shape in the transverse direction and the thickness of the junction on the contact side.

AB - Patterned electrode designs are used to control optical mode shape in high-power semiconductor lasers by localizing current injection. In this letter, we present comparison of current density profiles in the active layer achieved by different contact designs. Single-voltage digitated contact, distributed regular and random Gaussian contact configurations are studied using numerical solutions of semiconductor device equations that govern electrostatic potential and carrier concentrations in three spatial dimensions. The results of our calculations indicate that lateral current profile is influenced by the contact shape in the transverse direction and the thickness of the junction on the contact side.

KW - Current distribution

KW - Numerical simulations

KW - Semiconductor lasers

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Comparison of contact designs for improved stability of broad area semiconductor lasers

Abstract

Keywords

ASJC Scopus subject areas

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