Coherent electric-field effects in semiconductors

T. Meier; K. C. Je; F. Rossi; J. Hader; P. Thomas; S. W. Koch

doi:10.1117/12.306150

Coherent electric-field effects in semiconductors

T. Meier, K. C. Je, F. Rossi, J. Hader, P. Thomas, S. W. Koch

Research output: Contribution to journal › Conference article › peer-review

Abstract

A microscopic many-body theory is presented which allows one to compute the linear and nonlinear optical properties of semiconductor superlattices in the presence of static and time-dependent electric fields applied in the growth direction. For static fields the Bloch-oscillation dynamics, the role of Coulomb effects, carrier relaxation, phonon scattering, and inter- and intraband polarization dephasing is analyzed. The observability of dynamic localization using optical spectroscopy is discussed for alternating applied fields.

Original language	English (US)
Pages (from-to)	20-27
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3277
DOIs	https://doi.org/10.1117/12.306150
State	Published - 1998
Externally published	Yes
Event	Ultrafast Phenomena in Semiconductors II - San Jose, CA, United States Duration: Jan 28 1998 → Jan 29 1998

Keywords

Bloch oscillations
Dynamic localization
Electron-phonon scattering
Electronic correlations
Field-induced effects
Many-body theory
Nonlinear optical phenomena
Semiconductor superlattices

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.306150

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title = "Coherent electric-field effects in semiconductors",

abstract = "A microscopic many-body theory is presented which allows one to compute the linear and nonlinear optical properties of semiconductor superlattices in the presence of static and time-dependent electric fields applied in the growth direction. For static fields the Bloch-oscillation dynamics, the role of Coulomb effects, carrier relaxation, phonon scattering, and inter- and intraband polarization dephasing is analyzed. The observability of dynamic localization using optical spectroscopy is discussed for alternating applied fields.",

keywords = "Bloch oscillations, Dynamic localization, Electron-phonon scattering, Electronic correlations, Field-induced effects, Many-body theory, Nonlinear optical phenomena, Semiconductor superlattices",

author = "T. Meier and Je, \{K. C.\} and F. Rossi and J. Hader and P. Thomas and Koch, \{S. W.\}",

year = "1998",

doi = "10.1117/12.306150",

language = "English (US)",

volume = "3277",

pages = "20--27",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Ultrafast Phenomena in Semiconductors II ; Conference date: 28-01-1998 Through 29-01-1998",

}

TY - JOUR

T1 - Coherent electric-field effects in semiconductors

AU - Meier, T.

AU - Je, K. C.

AU - Rossi, F.

AU - Hader, J.

AU - Thomas, P.

AU - Koch, S. W.

PY - 1998

Y1 - 1998

N2 - A microscopic many-body theory is presented which allows one to compute the linear and nonlinear optical properties of semiconductor superlattices in the presence of static and time-dependent electric fields applied in the growth direction. For static fields the Bloch-oscillation dynamics, the role of Coulomb effects, carrier relaxation, phonon scattering, and inter- and intraband polarization dephasing is analyzed. The observability of dynamic localization using optical spectroscopy is discussed for alternating applied fields.

AB - A microscopic many-body theory is presented which allows one to compute the linear and nonlinear optical properties of semiconductor superlattices in the presence of static and time-dependent electric fields applied in the growth direction. For static fields the Bloch-oscillation dynamics, the role of Coulomb effects, carrier relaxation, phonon scattering, and inter- and intraband polarization dephasing is analyzed. The observability of dynamic localization using optical spectroscopy is discussed for alternating applied fields.

KW - Bloch oscillations

KW - Dynamic localization

KW - Electron-phonon scattering

KW - Electronic correlations

KW - Field-induced effects

KW - Many-body theory

KW - Nonlinear optical phenomena

KW - Semiconductor superlattices

UR - https://www.scopus.com/pages/publications/0032226049

UR - https://www.scopus.com/inward/citedby.url?scp=0032226049&partnerID=8YFLogxK

U2 - 10.1117/12.306150

DO - 10.1117/12.306150

M3 - Conference article

AN - SCOPUS:0032226049

SN - 0277-786X

VL - 3277

SP - 20

EP - 27

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Ultrafast Phenomena in Semiconductors II

Y2 - 28 January 1998 through 29 January 1998

ER -

Coherent electric-field effects in semiconductors

Abstract

Keywords

ASJC Scopus subject areas

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