Cleaning technology for improved gate oxide integrity

M. Meuris; S. Verhaverbeke; P. W. Mertens; H. F. Schmidt; M. M. Heyns; M. Kubota; A. Philipossian; K. Dillenbeck; D. Gräf; A. Schnegg; R. de Blank

doi:10.1016/0167-9317(93)90123-M

Cleaning technology for improved gate oxide integrity

M. Meuris, S. Verhaverbeke, P. W. Mertens, H. F. Schmidt, M. M. Heyns, M. Kubota, A. Philipossian, K. Dillenbeck, D. Gräf, A. Schnegg, R. de Blank

Chemical and Environmental Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The effect of metal contamination and silicon surface defects on the gate oxide yield is investigated. The characteristics of various cleaning procedures are studied and correlated with the integrity of thin gate oxides. The standard wet cleaning recipe is optimized and a new cleaning strategy is proposed. Selective contamination experiments in chemicals are used to investigate the effect of small amounts of metal contaminants on the gate oxide integrity. HF-last processes are investigated and a new wet cleaning strategy is proposed.

Original language	English (US)
Pages (from-to)	21-28
Number of pages	8
Journal	Microelectronic Engineering
Volume	22
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(93)90123-M
State	Published - Aug 1993

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/0167-9317(93)90123-M

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title = "Cleaning technology for improved gate oxide integrity",

abstract = "The effect of metal contamination and silicon surface defects on the gate oxide yield is investigated. The characteristics of various cleaning procedures are studied and correlated with the integrity of thin gate oxides. The standard wet cleaning recipe is optimized and a new cleaning strategy is proposed. Selective contamination experiments in chemicals are used to investigate the effect of small amounts of metal contaminants on the gate oxide integrity. HF-last processes are investigated and a new wet cleaning strategy is proposed.",

author = "M. Meuris and S. Verhaverbeke and Mertens, {P. W.} and Schmidt, {H. F.} and Heyns, {M. M.} and M. Kubota and A. Philipossian and K. Dillenbeck and D. Gr{\"a}f and A. Schnegg and {de Blank}, R.",

year = "1993",

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doi = "10.1016/0167-9317(93)90123-M",

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T1 - Cleaning technology for improved gate oxide integrity

AU - Meuris, M.

AU - Verhaverbeke, S.

AU - Mertens, P. W.

AU - Schmidt, H. F.

AU - Heyns, M. M.

AU - Kubota, M.

AU - Philipossian, A.

AU - Dillenbeck, K.

AU - Gräf, D.

AU - Schnegg, A.

AU - de Blank, R.

PY - 1993/8

Y1 - 1993/8

N2 - The effect of metal contamination and silicon surface defects on the gate oxide yield is investigated. The characteristics of various cleaning procedures are studied and correlated with the integrity of thin gate oxides. The standard wet cleaning recipe is optimized and a new cleaning strategy is proposed. Selective contamination experiments in chemicals are used to investigate the effect of small amounts of metal contaminants on the gate oxide integrity. HF-last processes are investigated and a new wet cleaning strategy is proposed.

AB - The effect of metal contamination and silicon surface defects on the gate oxide yield is investigated. The characteristics of various cleaning procedures are studied and correlated with the integrity of thin gate oxides. The standard wet cleaning recipe is optimized and a new cleaning strategy is proposed. Selective contamination experiments in chemicals are used to investigate the effect of small amounts of metal contaminants on the gate oxide integrity. HF-last processes are investigated and a new wet cleaning strategy is proposed.

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VL - 22

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EP - 28

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Cleaning technology for improved gate oxide integrity

Abstract

ASJC Scopus subject areas

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