Cleaning technology for improved gate oxide integrity

M. Meuris, S. Verhaverbeke, P. W. Mertens, H. F. Schmidt, M. M. Heyns, M. Kubota, A. Philipossian, K. Dillenbeck, D. Gräf, A. Schnegg, R. de Blank

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


The effect of metal contamination and silicon surface defects on the gate oxide yield is investigated. The characteristics of various cleaning procedures are studied and correlated with the integrity of thin gate oxides. The standard wet cleaning recipe is optimized and a new cleaning strategy is proposed. Selective contamination experiments in chemicals are used to investigate the effect of small amounts of metal contaminants on the gate oxide integrity. HF-last processes are investigated and a new wet cleaning strategy is proposed.

Original languageEnglish (US)
Pages (from-to)21-28
Number of pages8
JournalMicroelectronic Engineering
Issue number1-4
StatePublished - Aug 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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