Cleaning of cross-contamination of ihgh-k dielectrics in plasma etch tool

Viraj Pandit; H. G. Parks; Bert Vermeire; Srini Raghavan

Cleaning of cross-contamination of ihgh-k dielectrics in plasma etch tool

Viraj Pandit, H. G. Parks, Bert Vermeire, Srini Raghavan

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Direct tunneling (1, 2) through the gate SiO₂ (ε_r ≈4) has become a serious concern for MOSFET scaling. The semiconductor industry is focusing on materials with high dielectric constants (ε≥ 10) to replace SiO₂ gate oxides. Among the potential high-K materials, oxides and silicates of Hafnium (Hf) have shown the most promise (3). The potential of cross-contamination of Hf in a plasma etch tool was previously investigated (7). This paper extends the study and discusses the results of standard cleaning processes (SCI, SC2 etc.) on the cross-contaminated wafers. None of the standard cleaning solutions completely remove the contamination.

Original language	English (US)
Title of host publication	Cleaning Technology in Semiconductor Device Manufacturing IX
Publisher	Electrochemical Society Inc.
Pages	59-66
Number of pages	8
Edition	3
ISBN (Electronic)	9781607685395
State	Published - 2006
Event	9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States Duration: Oct 16 2005 → Oct 21 2005

Publication series

Name	ECS Transactions
Number	3
Volume	1
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society
Country/Territory	United States
City	Los Angeles, CA
Period	10/16/05 → 10/21/05

ASJC Scopus subject areas

General Engineering

Cite this

Pandit, V, Parks, HG, Vermeire, B & Raghavan, S 2006, Cleaning of cross-contamination of ihgh-k dielectrics in plasma etch tool. in Cleaning Technology in Semiconductor Device Manufacturing IX. 3 edn, ECS Transactions, no. 3, vol. 1, Electrochemical Society Inc., pp. 59-66, 9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society, Los Angeles, CA, United States, 10/16/05.

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abstract = "Direct tunneling (1, 2) through the gate SiO2 (εr ≈4) has become a serious concern for MOSFET scaling. The semiconductor industry is focusing on materials with high dielectric constants (ε≥ 10) to replace SiO2 gate oxides. Among the potential high-K materials, oxides and silicates of Hafnium (Hf) have shown the most promise (3). The potential of cross-contamination of Hf in a plasma etch tool was previously investigated (7). This paper extends the study and discusses the results of standard cleaning processes (SCI, SC2 etc.) on the cross-contaminated wafers. None of the standard cleaning solutions completely remove the contamination.",

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AB - Direct tunneling (1, 2) through the gate SiO2 (εr ≈4) has become a serious concern for MOSFET scaling. The semiconductor industry is focusing on materials with high dielectric constants (ε≥ 10) to replace SiO2 gate oxides. Among the potential high-K materials, oxides and silicates of Hafnium (Hf) have shown the most promise (3). The potential of cross-contamination of Hf in a plasma etch tool was previously investigated (7). This paper extends the study and discusses the results of standard cleaning processes (SCI, SC2 etc.) on the cross-contaminated wafers. None of the standard cleaning solutions completely remove the contamination.

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M3 - Conference contribution

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Cleaning of cross-contamination of ihgh-k dielectrics in plasma etch tool

Abstract

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ASJC Scopus subject areas

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