Abstract
InGaAs/GaAs circular-grating surface-emission DBR lasers with a pulsed external efficiency over 11% (power > 100 mW) and a divergence of 1° are obtained. We also demonstrate the first CW operation near room temperature.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 141-142 |
| Number of pages | 2 |
| Journal | Conference Digest - IEEE International Semiconductor Laser Conference |
| State | Published - 1994 |
| Externally published | Yes |
| Event | Proceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA Duration: Sep 19 1994 → Sep 23 1994 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering