Circular-Grating Surface-Emitting Distributed Bragg Reflector Lasers on an InGaAs–GaAs Structure for 0.98-μm Applications

Mahmoud Fallahi; Françhise Chatenoud; Michel Dion; Ian Templeton; Richard Barber; Jim Thompson

doi:10.1109/2944.401219

Circular-Grating Surface-Emitting Distributed Bragg Reflector Lasers on an InGaAs–GaAs Structure for 0.98-μm Applications

Mahmoud Fallahi, Françhise Chatenoud, Michel Dion, Ian Templeton, Richard Barber, Jim Thompson

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

In this paper, we report on the design and fabrication of electrically-pumped circular-grating surface-emitting DBR lasers for operation in the 0.98-μm wavelength range. The layer structure with InGaAs–GaAs–AlGaAs strained multiquantum-wells was obtained by one-step epitaxial growth. Circular gratings are defined by electron-beam lithography around circular gain sections of different diameters. Low threshold CW operation as low as 26 mA for a 60-μm diameter gain section, and high-power pulsed operation of over 120 mW for a 100-μm diameter gain region are demonstrated. A quasi-circular far-field pattern with a divergence of about 1° is obtained.

Original language	English (US)
Pages (from-to)	382-386
Number of pages	5
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	1
Issue number	2
DOIs	https://doi.org/10.1109/2944.401219
State	Published - Jun 1995
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/2944.401219

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title = "Circular-Grating Surface-Emitting Distributed Bragg Reflector Lasers on an InGaAs–GaAs Structure for 0.98-μm Applications",

abstract = "In this paper, we report on the design and fabrication of electrically-pumped circular-grating surface-emitting DBR lasers for operation in the 0.98-μm wavelength range. The layer structure with InGaAs–GaAs–AlGaAs strained multiquantum-wells was obtained by one-step epitaxial growth. Circular gratings are defined by electron-beam lithography around circular gain sections of different diameters. Low threshold CW operation as low as 26 mA for a 60-μm diameter gain section, and high-power pulsed operation of over 120 mW for a 100-μm diameter gain region are demonstrated. A quasi-circular far-field pattern with a divergence of about 1° is obtained.",

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year = "1995",

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T1 - Circular-Grating Surface-Emitting Distributed Bragg Reflector Lasers on an InGaAs–GaAs Structure for 0.98-μm Applications

AU - Fallahi, Mahmoud

AU - Chatenoud, Françhise

AU - Dion, Michel

AU - Templeton, Ian

AU - Barber, Richard

AU - Thompson, Jim

PY - 1995/6

Y1 - 1995/6

N2 - In this paper, we report on the design and fabrication of electrically-pumped circular-grating surface-emitting DBR lasers for operation in the 0.98-μm wavelength range. The layer structure with InGaAs–GaAs–AlGaAs strained multiquantum-wells was obtained by one-step epitaxial growth. Circular gratings are defined by electron-beam lithography around circular gain sections of different diameters. Low threshold CW operation as low as 26 mA for a 60-μm diameter gain section, and high-power pulsed operation of over 120 mW for a 100-μm diameter gain region are demonstrated. A quasi-circular far-field pattern with a divergence of about 1° is obtained.

AB - In this paper, we report on the design and fabrication of electrically-pumped circular-grating surface-emitting DBR lasers for operation in the 0.98-μm wavelength range. The layer structure with InGaAs–GaAs–AlGaAs strained multiquantum-wells was obtained by one-step epitaxial growth. Circular gratings are defined by electron-beam lithography around circular gain sections of different diameters. Low threshold CW operation as low as 26 mA for a 60-μm diameter gain section, and high-power pulsed operation of over 120 mW for a 100-μm diameter gain region are demonstrated. A quasi-circular far-field pattern with a divergence of about 1° is obtained.

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Circular-Grating Surface-Emitting Distributed Bragg Reflector Lasers on an InGaAs–GaAs Structure for 0.98-μm Applications

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