Abstract
InGaAs/GaAs circular-grating surface-emission DBR lasers with a pulsed external efficiency over 11% (power > 100 mW) and a divergence of 1° are obtained. We also demonstrate the first CW operation near room temperature.
Original language | English (US) |
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Pages (from-to) | 141-142 |
Number of pages | 2 |
Journal | Conference Digest - IEEE International Semiconductor Laser Conference |
State | Published - 1994 |
Externally published | Yes |
Event | Proceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA Duration: Sep 19 1994 → Sep 23 1994 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering