Abstract
Since its introduction in the mid-1970's, Vacuum-CVD high temperature oxide (HTO) has found numerous applications in the semiconductor industry. It is most extensively used as a primary or secondary passivation layer over silicon devices, and can be used as an intermediate coating applied to a substrate to minimize hysteresis and enhance adhesion. This work describes the design, construction, and performance of a V-CVD system for the large-scale industrial production of thin-film HTO, on circular substrates up to 150mm in diameter.
Original language | English (US) |
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Pages (from-to) | 642-643 |
Number of pages | 2 |
Journal | Electrochemical Society Extended Abstracts |
Volume | 84-2 |
State | Published - 1984 |
ASJC Scopus subject areas
- Engineering(all)