@inproceedings{0b5200a29abf43e285c28d6d2fb2ff9a,
title = "Chemical passivation of In0.53Ga0.47As(100) using ammonium sulfide and thiols",
abstract = "Dilute solutions of (NH4)2S in water and of 1-eicosanethiol (ET) in ethanol were used to deposit a protective layer to prevent the reoxidation of clean In0.53Ga0.47As(100) substrates. The surface composition of the InGaAs after oxide etching in 0.3 M HF, and after immersion in (NH4)2S or ET solutions was studied using XPS. Immersing clean InGaAs substrates in 4.0 mM ET for 20 h protected the surface for 4 min, after which oxide states were detected by XPS. A 20 min immersion in 3 mM (NH4)2S in a glove box slowed down the reoxidation process. After 1 h of atmosphere exposure, the amount of InGaAs oxides on the surface treated in (NH4)2S were lower than those of a control sample after only 4 min of air exposure. The sulfur layer deposited from aqueous ammonium sulfide and the self-assembled eicosanethiol layer blocked reoxidation and chemically passivated the surface only for brief ambient exposures.",
author = "Y. Contreras and Muscat, {A. J.}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting ; Conference date: 11-10-2015 Through 15-10-2015",
year = "2015",
doi = "10.1149/06908.0261ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "8",
pages = "261--267",
editor = "T. Hattori and Mertens, {P. W.} and Novak, {R. E.} and J. Ruzyllo",
booktitle = "Semiconductor Cleaning Science and Technology 14, SCST 14",
edition = "8",
}