TY - JOUR
T1 - Charge-transport properties of the 1,4-diiodobenzene crystal
T2 - A quantum-mechanical study
AU - Sánchez-Carrera, Roei S.
AU - Coropceanu, Veaceslav
AU - Kim, Eung Gun
AU - Brédas, Jean Luc
PY - 2008/9/23
Y1 - 2008/9/23
N2 - The 1,4-diiodobenzene (DIB) crystal stands out among molecular organic semiconducting crystals because of its remarkable room-temperature hole mobility (>10 Cm2/(V s)). Here, on the basis of a density functional theory study, we demonstrate that the high mobility in DIB is primarily associated with the heavy iodine atoms. We find that along specific crystal directions, both electrons and holes are characterized by a very small effective mass of about 0.5 m0- Interestingly, iodine substitution also leads to a significant decrease in the local hole-vibration coupling compared to benzene; as a result, the electronic coupling for holes is calculated to be much larger than the hole-vibration coupling, which is consistent with the observation of large hole mobility. In marked contrast, the polaron binding energy in the case of electrons is found to be significantly higher than the electronic coupling; this implies that electrons in DIB are strongly localized even at room temperature.
AB - The 1,4-diiodobenzene (DIB) crystal stands out among molecular organic semiconducting crystals because of its remarkable room-temperature hole mobility (>10 Cm2/(V s)). Here, on the basis of a density functional theory study, we demonstrate that the high mobility in DIB is primarily associated with the heavy iodine atoms. We find that along specific crystal directions, both electrons and holes are characterized by a very small effective mass of about 0.5 m0- Interestingly, iodine substitution also leads to a significant decrease in the local hole-vibration coupling compared to benzene; as a result, the electronic coupling for holes is calculated to be much larger than the hole-vibration coupling, which is consistent with the observation of large hole mobility. In marked contrast, the polaron binding energy in the case of electrons is found to be significantly higher than the electronic coupling; this implies that electrons in DIB are strongly localized even at room temperature.
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U2 - 10.1021/cm801108c
DO - 10.1021/cm801108c
M3 - Article
AN - SCOPUS:53549119427
VL - 20
SP - 5832
EP - 5838
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 18
ER -