Charge transfer luminescence in (GaIn)As/GaAs/Ga(NAs) double quantum wells

P. Springer; S. Gies; P. Hens; C. Fuchs; H. Han; J. Hader; J. V. Moloney; W. Stolz; K. Volz; S. W. Koch; W. Heimbrodt

doi:10.1016/j.jlumin.2016.03.010

Charge transfer luminescence in (GaIn)As/GaAs/Ga(NAs) double quantum wells

P. Springer, S. Gies, P. Hens, C. Fuchs, H. Han, J. Hader, J. V. Moloney, W. Stolz, K. Volz, S. W. Koch, W. Heimbrodt

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Charge transfer excitons are studied in double quantum well structures consisting of a (GaIn)As and a Ga(NAs) layer separated by a GaAs film of variable thickness. With decreasing barrier thickness, the gradual change from a spatially direct exciton within the (GaIn)As well to a charge transfer exciton bound across the GaAs spacing layer is observed. The optical spectra are well reproduced by a fully microscopic theory and band structure calculations based on the k·p method using a weak type-I valence band offset of approximately (45±40)meV at the Ga(NAs)/GaAs interface.

Original language	English (US)
Pages (from-to)	255-259
Number of pages	5
Journal	Journal of Luminescence
Volume	175
DOIs	https://doi.org/10.1016/j.jlumin.2016.03.010
State	Published - Jul 1 2016

Keywords

Band offset
Band structure
Dilute nitrides
Optical properties
Photoluminescence

ASJC Scopus subject areas

Biophysics
Biochemistry
General Chemistry
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.jlumin.2016.03.010

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title = "Charge transfer luminescence in (GaIn)As/GaAs/Ga(NAs) double quantum wells",

abstract = "Charge transfer excitons are studied in double quantum well structures consisting of a (GaIn)As and a Ga(NAs) layer separated by a GaAs film of variable thickness. With decreasing barrier thickness, the gradual change from a spatially direct exciton within the (GaIn)As well to a charge transfer exciton bound across the GaAs spacing layer is observed. The optical spectra are well reproduced by a fully microscopic theory and band structure calculations based on the k·p method using a weak type-I valence band offset of approximately (45±40)meV at the Ga(NAs)/GaAs interface.",

keywords = "Band offset, Band structure, Dilute nitrides, Optical properties, Photoluminescence",

author = "P. Springer and S. Gies and P. Hens and C. Fuchs and H. Han and J. Hader and Moloney, {J. V.} and W. Stolz and K. Volz and Koch, {S. W.} and W. Heimbrodt",

note = "Funding Information: We gratefully acknowledge financial support by the DFG in the framework of the SFB 1083 and GRK 1782 . The work of J.H. and J.V.M. is supported by the US AFOSR via Contract FA9550-14-1-0062 . Publisher Copyright: {\textcopyright} 2016 Elsevier B.V. All rights reserved.",

year = "2016",

month = jul,

day = "1",

doi = "10.1016/j.jlumin.2016.03.010",

language = "English (US)",

volume = "175",

pages = "255--259",

journal = "Journal of Luminescence",

issn = "0022-2313",

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T1 - Charge transfer luminescence in (GaIn)As/GaAs/Ga(NAs) double quantum wells

AU - Springer, P.

AU - Gies, S.

AU - Hens, P.

AU - Fuchs, C.

AU - Han, H.

AU - Hader, J.

AU - Moloney, J. V.

AU - Stolz, W.

AU - Volz, K.

AU - Koch, S. W.

AU - Heimbrodt, W.

N1 - Funding Information: We gratefully acknowledge financial support by the DFG in the framework of the SFB 1083 and GRK 1782 . The work of J.H. and J.V.M. is supported by the US AFOSR via Contract FA9550-14-1-0062 . Publisher Copyright: © 2016 Elsevier B.V. All rights reserved.

PY - 2016/7/1

Y1 - 2016/7/1

N2 - Charge transfer excitons are studied in double quantum well structures consisting of a (GaIn)As and a Ga(NAs) layer separated by a GaAs film of variable thickness. With decreasing barrier thickness, the gradual change from a spatially direct exciton within the (GaIn)As well to a charge transfer exciton bound across the GaAs spacing layer is observed. The optical spectra are well reproduced by a fully microscopic theory and band structure calculations based on the k·p method using a weak type-I valence band offset of approximately (45±40)meV at the Ga(NAs)/GaAs interface.

AB - Charge transfer excitons are studied in double quantum well structures consisting of a (GaIn)As and a Ga(NAs) layer separated by a GaAs film of variable thickness. With decreasing barrier thickness, the gradual change from a spatially direct exciton within the (GaIn)As well to a charge transfer exciton bound across the GaAs spacing layer is observed. The optical spectra are well reproduced by a fully microscopic theory and band structure calculations based on the k·p method using a weak type-I valence band offset of approximately (45±40)meV at the Ga(NAs)/GaAs interface.

KW - Band offset

KW - Band structure

KW - Dilute nitrides

KW - Optical properties

KW - Photoluminescence

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SN - 0022-2313

VL - 175

SP - 255

EP - 259

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

Charge transfer luminescence in (GaIn)As/GaAs/Ga(NAs) double quantum wells

Abstract

Keywords

ASJC Scopus subject areas

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