Charge-imaging field-effect transistor

L. H. Chen; M. A. Topinka; B. J. LeRoy; R. M. Westervelt; K. D. Maranowski; A. C. Gossard

doi:10.1063/1.1395516

Charge-imaging field-effect transistor

L. H. Chen, M. A. Topinka, B. J. LeRoy, R. M. Westervelt, K. D. Maranowski, A. C. Gossard

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. These FETs have quantum point contact geometries to minimize the size of the channel and to improve the spatial resolution. The charge noise at 7=4.2 K has a 1/f behavior and reaches values ≪ 1 e/Hz^1/2 at 30 kHz. The spatial resolution of the FET was measured at liquid He temperatures using a scanned probe microscope with a charged tip. The charge sensitivity of the FET is confined to a disk with full width at half maximum 340 nm. These FETs are suitable for integration onto a GaAs/AlGaAs scanned probe microscopy cantilever.

Original language	English (US)
Pages (from-to)	1202-1204
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	8
DOIs	https://doi.org/10.1063/1.1395516
State	Published - Aug 20 2001
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1395516

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@article{3c7259aa8b6a4456ae6e779d3912e8ab,

title = "Charge-imaging field-effect transistor",

abstract = "Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. These FETs have quantum point contact geometries to minimize the size of the channel and to improve the spatial resolution. The charge noise at 7=4.2 K has a 1/f behavior and reaches values ≪ 1 e/Hz1/2 at 30 kHz. The spatial resolution of the FET was measured at liquid He temperatures using a scanned probe microscope with a charged tip. The charge sensitivity of the FET is confined to a disk with full width at half maximum 340 nm. These FETs are suitable for integration onto a GaAs/AlGaAs scanned probe microscopy cantilever.",

author = "Chen, {L. H.} and Topinka, {M. A.} and LeRoy, {B. J.} and Westervelt, {R. M.} and Maranowski, {K. D.} and Gossard, {A. C.}",

year = "2001",

month = aug,

day = "20",

doi = "10.1063/1.1395516",

language = "English (US)",

volume = "79",

pages = "1202--1204",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Charge-imaging field-effect transistor

AU - Chen, L. H.

AU - Topinka, M. A.

AU - LeRoy, B. J.

AU - Westervelt, R. M.

AU - Maranowski, K. D.

AU - Gossard, A. C.

PY - 2001/8/20

Y1 - 2001/8/20

N2 - Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. These FETs have quantum point contact geometries to minimize the size of the channel and to improve the spatial resolution. The charge noise at 7=4.2 K has a 1/f behavior and reaches values ≪ 1 e/Hz1/2 at 30 kHz. The spatial resolution of the FET was measured at liquid He temperatures using a scanned probe microscope with a charged tip. The charge sensitivity of the FET is confined to a disk with full width at half maximum 340 nm. These FETs are suitable for integration onto a GaAs/AlGaAs scanned probe microscopy cantilever.

AB - Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. These FETs have quantum point contact geometries to minimize the size of the channel and to improve the spatial resolution. The charge noise at 7=4.2 K has a 1/f behavior and reaches values ≪ 1 e/Hz1/2 at 30 kHz. The spatial resolution of the FET was measured at liquid He temperatures using a scanned probe microscope with a charged tip. The charge sensitivity of the FET is confined to a disk with full width at half maximum 340 nm. These FETs are suitable for integration onto a GaAs/AlGaAs scanned probe microscopy cantilever.

UR - http://www.scopus.com/inward/record.url?scp=0040927812&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0040927812&partnerID=8YFLogxK

U2 - 10.1063/1.1395516

DO - 10.1063/1.1395516

M3 - Article

AN - SCOPUS:0040927812

SN - 0003-6951

VL - 79

SP - 1202

EP - 1204

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Charge-imaging field-effect transistor

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