Characterization of Strained-layer and asymmetrically coupled multiple quantum well electro-optic modulators

M. J. Hayduk; R. K. Boncek; S. T. Johns; D. A. Norton; M. F. Krol; B. P. McGinnis; Sergey Ten; H. Gibbs; G. Khitrova; N. Peyghambarian; D. C. Sun; E. T. Towe; R. P. Leavitt; J. T. Pham

doi:10.1117/12.177340

Characterization of Strained-layer and asymmetrically coupled multiple quantum well electro-optic modulators

M. J. Hayduk
, R. K. Boncek
, S. T. Johns
, D. A. Norton
, M. F. Krol
, B. P. McGinnis
, Sergey Ten
, H. Gibbs
, G. Khitrova
, N. Peyghambarian
, D. C. Sun
, E. T. Towe
, R. P. Leavitt
, J. T. Pham

Research output: Contribution to journal › Conference article › peer-review

Abstract

Multiple quantum well (MQW) electro-optic modulators grown on both GaAs and InP substrates have been designed and characterized. Strained-layer (In,Ga)As/GaAs p-i-n diodes grown on (100) GaAs substrates were found to have a differential absorption coefficient of 3.7 × 10³ cm^-1 for an applied electric field of 6 6 × 10⁴ V/cm. These (In,Ga)As/GaAs devices were also grown on (110) GaAs substrates and exhibited polarization sensitive electroabsorption. In addition, InGaAs/InAlAs asymmetric coupled MQWs were designed and fabricated. Real charge transfer kinetics between the coupled MQWs was exhibited by these devices.

Original language	English (US)
Pages (from-to)	19-29
Number of pages	11
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2216
DOIs	https://doi.org/10.1117/12.177340
State	Published - Jun 3 1994
Event	Photonics at the Air Force Photonics Center 1994 - Orlando, United States Duration: Apr 4 1994 → Apr 8 1994

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.177340

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Hayduk, M. J., Boncek, R. K., Johns, S. T., Norton, D. A., Krol, M. F., McGinnis, B. P., Ten, S., Gibbs, H., Khitrova, G., Peyghambarian, N., Sun, D. C., Towe, E. T., Leavitt, R. P., & Pham, J. T. (1994). Characterization of Strained-layer and asymmetrically coupled multiple quantum well electro-optic modulators. Proceedings of SPIE - The International Society for Optical Engineering, 2216, 19-29. https://doi.org/10.1117/12.177340

Hayduk, MJ, Boncek, RK, Johns, ST, Norton, DA, Krol, MF, McGinnis, BP, Ten, S, Gibbs, H, Khitrova, G, Peyghambarian, N, Sun, DC, Towe, ET, Leavitt, RP & Pham, JT 1994, 'Characterization of Strained-layer and asymmetrically coupled multiple quantum well electro-optic modulators', Proceedings of SPIE - The International Society for Optical Engineering, vol. 2216, pp. 19-29. https://doi.org/10.1117/12.177340

@article{94d78bcc88ab4ad3bffdc6596f11df74,

title = "Characterization of Strained-layer and asymmetrically coupled multiple quantum well electro-optic modulators",

abstract = "Multiple quantum well (MQW) electro-optic modulators grown on both GaAs and InP substrates have been designed and characterized. Strained-layer (In,Ga)As/GaAs p-i-n diodes grown on (100) GaAs substrates were found to have a differential absorption coefficient of 3.7 × 103 cm-1 for an applied electric field of 6 6 × 104 V/cm. These (In,Ga)As/GaAs devices were also grown on (110) GaAs substrates and exhibited polarization sensitive electroabsorption. In addition, InGaAs/InAlAs asymmetric coupled MQWs were designed and fabricated. Real charge transfer kinetics between the coupled MQWs was exhibited by these devices.",

author = "Hayduk, \{M. J.\} and Boncek, \{R. K.\} and Johns, \{S. T.\} and Norton, \{D. A.\} and Krol, \{M. F.\} and McGinnis, \{B. P.\} and Sergey Ten and H. Gibbs and G. Khitrova and N. Peyghambarian and Sun, \{D. C.\} and Towe, \{E. T.\} and Leavitt, \{R. P.\} and Pham, \{J. T.\}",

year = "1994",

month = jun,

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doi = "10.1117/12.177340",

language = "English (US)",

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T1 - Characterization of Strained-layer and asymmetrically coupled multiple quantum well electro-optic modulators

AU - Hayduk, M. J.

AU - Boncek, R. K.

AU - Johns, S. T.

AU - Norton, D. A.

AU - Krol, M. F.

AU - McGinnis, B. P.

AU - Ten, Sergey

AU - Gibbs, H.

AU - Khitrova, G.

AU - Peyghambarian, N.

AU - Sun, D. C.

AU - Towe, E. T.

AU - Leavitt, R. P.

AU - Pham, J. T.

PY - 1994/6/3

Y1 - 1994/6/3

N2 - Multiple quantum well (MQW) electro-optic modulators grown on both GaAs and InP substrates have been designed and characterized. Strained-layer (In,Ga)As/GaAs p-i-n diodes grown on (100) GaAs substrates were found to have a differential absorption coefficient of 3.7 × 103 cm-1 for an applied electric field of 6 6 × 104 V/cm. These (In,Ga)As/GaAs devices were also grown on (110) GaAs substrates and exhibited polarization sensitive electroabsorption. In addition, InGaAs/InAlAs asymmetric coupled MQWs were designed and fabricated. Real charge transfer kinetics between the coupled MQWs was exhibited by these devices.

AB - Multiple quantum well (MQW) electro-optic modulators grown on both GaAs and InP substrates have been designed and characterized. Strained-layer (In,Ga)As/GaAs p-i-n diodes grown on (100) GaAs substrates were found to have a differential absorption coefficient of 3.7 × 103 cm-1 for an applied electric field of 6 6 × 104 V/cm. These (In,Ga)As/GaAs devices were also grown on (110) GaAs substrates and exhibited polarization sensitive electroabsorption. In addition, InGaAs/InAlAs asymmetric coupled MQWs were designed and fabricated. Real charge transfer kinetics between the coupled MQWs was exhibited by these devices.

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U2 - 10.1117/12.177340

DO - 10.1117/12.177340

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AN - SCOPUS:85076771593

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VL - 2216

SP - 19

EP - 29

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Photonics at the Air Force Photonics Center 1994

Y2 - 4 April 1994 through 8 April 1994

ER -

Characterization of Strained-layer and asymmetrically coupled multiple quantum well electro-optic modulators

Abstract

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