Abstract
Multiple quantum well (MQW) electro-optic modulators grown on both GaAs and InP substrates have been designed and characterized. Strained-layer (In,Ga)As/GaAs p-i-n diodes grown on (100) GaAs substrates were found to have a differential absorption coefficient of 3.7 × 103 cm-1 for an applied electric field of 6 6 × 104 V/cm. These (In,Ga)As/GaAs devices were also grown on (110) GaAs substrates and exhibited polarization sensitive electroabsorption. In addition, InGaAs/InAlAs asymmetric coupled MQWs were designed and fabricated. Real charge transfer kinetics between the coupled MQWs was exhibited by these devices.
Original language | English (US) |
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Pages (from-to) | 19-29 |
Number of pages | 11 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 2216 |
DOIs | |
State | Published - Jun 3 1994 |
Event | Photonics at the Air Force Photonics Center 1994 - Orlando, United States Duration: Apr 4 1994 → Apr 8 1994 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering