CCD soft-X-ray detectors with improved high- and low-energy performance

B. E. Burke; J. A. Gregory; A. H. Loomis; M. Lesser; M. W. Bautz; S. E. Kissel; D. D. Rathman; R. M. Osgood; M. J. Cooper; T. A. Lind; G. R. Ricker

doi:10.1109/TNS.2004.835901

CCD soft-X-ray detectors with improved high- and low-energy performance

B. E. Burke, J. A. Gregory, A. H. Loomis, M. Lesser, M. W. Bautz, S. E. Kissel, D. D. Rathman, R. M. Osgood, M. J. Cooper, T. A. Lind, G. R. Ricker

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16 Scopus citations

Abstract

We describe results from recent enhancements to the performance of charge-coupled devices (CCDs) to both low- and high-energy soft X-rays. For improved low-energy (E < 500 eV) sensitivity, we show that a low-temperature surface treatment on back-illuminated devices results in superior energy resolution compared to that of the devices flown on Chandra, which had a more process-intensive, high-temperature treatment. For improved high-energy response, we describe a design approach for MOS CCDs that allows high substrate biases for deep depletion (up to 160 μm) and, thus, improved X-ray detection for E > 5 keV.

Original language	English (US)
Pages (from-to)	2322-2327
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	51
Issue number	5 I
DOIs	https://doi.org/10.1109/TNS.2004.835901
State	Published - Oct 2004

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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@article{cc4b4ba338334c528ac7372466c875da,

title = "CCD soft-X-ray detectors with improved high- and low-energy performance",

abstract = "We describe results from recent enhancements to the performance of charge-coupled devices (CCDs) to both low- and high-energy soft X-rays. For improved low-energy (E < 500 eV) sensitivity, we show that a low-temperature surface treatment on back-illuminated devices results in superior energy resolution compared to that of the devices flown on Chandra, which had a more process-intensive, high-temperature treatment. For improved high-energy response, we describe a design approach for MOS CCDs that allows high substrate biases for deep depletion (up to 160 μm) and, thus, improved X-ray detection for E > 5 keV.",

author = "Burke, {B. E.} and Gregory, {J. A.} and Loomis, {A. H.} and M. Lesser and Bautz, {M. W.} and Kissel, {S. E.} and Rathman, {D. D.} and Osgood, {R. M.} and Cooper, {M. J.} and Lind, {T. A.} and Ricker, {G. R.}",

note = "Funding Information: Manuscript received November 30, 2003; revised May 11, 2004. This work was supported by the Department of the Air Force under Contract F19628-00-C-0002. Opinions, interpretations, conclusions, and recommendations are those of the authors and are not necessarily endorsed by the United States Government.",

year = "2004",

month = oct,

doi = "10.1109/TNS.2004.835901",

language = "English (US)",

volume = "51",

pages = "2322--2327",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5 I",

}

TY - JOUR

T1 - CCD soft-X-ray detectors with improved high- and low-energy performance

AU - Burke, B. E.

AU - Gregory, J. A.

AU - Loomis, A. H.

AU - Lesser, M.

AU - Bautz, M. W.

AU - Kissel, S. E.

AU - Rathman, D. D.

AU - Osgood, R. M.

AU - Cooper, M. J.

AU - Lind, T. A.

AU - Ricker, G. R.

N1 - Funding Information: Manuscript received November 30, 2003; revised May 11, 2004. This work was supported by the Department of the Air Force under Contract F19628-00-C-0002. Opinions, interpretations, conclusions, and recommendations are those of the authors and are not necessarily endorsed by the United States Government.

PY - 2004/10

Y1 - 2004/10

N2 - We describe results from recent enhancements to the performance of charge-coupled devices (CCDs) to both low- and high-energy soft X-rays. For improved low-energy (E < 500 eV) sensitivity, we show that a low-temperature surface treatment on back-illuminated devices results in superior energy resolution compared to that of the devices flown on Chandra, which had a more process-intensive, high-temperature treatment. For improved high-energy response, we describe a design approach for MOS CCDs that allows high substrate biases for deep depletion (up to 160 μm) and, thus, improved X-ray detection for E > 5 keV.

AB - We describe results from recent enhancements to the performance of charge-coupled devices (CCDs) to both low- and high-energy soft X-rays. For improved low-energy (E < 500 eV) sensitivity, we show that a low-temperature surface treatment on back-illuminated devices results in superior energy resolution compared to that of the devices flown on Chandra, which had a more process-intensive, high-temperature treatment. For improved high-energy response, we describe a design approach for MOS CCDs that allows high substrate biases for deep depletion (up to 160 μm) and, thus, improved X-ray detection for E > 5 keV.

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U2 - 10.1109/TNS.2004.835901

DO - 10.1109/TNS.2004.835901

M3 - Article

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SN - 0018-9499

VL - 51

SP - 2322

EP - 2327

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 5 I

ER -

CCD soft-X-ray detectors with improved high- and low-energy performance

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