Cavity enhanced terahertz modulation

N. Born; M. Scheller; M. Koch; J. V. Moloney

doi:10.1063/1.4868416

Cavity enhanced terahertz modulation

N. Born
, M. Scheller
, M. Koch
, J. V. Moloney

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We present a versatile concept for all optical terahertz (THz) amplitude modulators based on a Fabry-Pérot semiconductor cavity design. Employing the high reflectivity of two parallel meta-surfaces allows for trapping selected THz photons within the cavity and thus only a weak optical modulation of the semiconductor absorbance is required to significantly damp the field within the cavity. The optical switching yields to modulation depths of more than 90% with insertion efficiencies of 80%.

Original language	English (US)
Article number	103508
Journal	Applied Physics Letters
Volume	104
Issue number	10
DOIs	https://doi.org/10.1063/1.4868416
State	Published - Mar 10 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4868416

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title = "Cavity enhanced terahertz modulation",

abstract = "We present a versatile concept for all optical terahertz (THz) amplitude modulators based on a Fabry-P{\'e}rot semiconductor cavity design. Employing the high reflectivity of two parallel meta-surfaces allows for trapping selected THz photons within the cavity and thus only a weak optical modulation of the semiconductor absorbance is required to significantly damp the field within the cavity. The optical switching yields to modulation depths of more than 90\% with insertion efficiencies of 80\%.",

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AU - Koch, M.

AU - Moloney, J. V.

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N2 - We present a versatile concept for all optical terahertz (THz) amplitude modulators based on a Fabry-Pérot semiconductor cavity design. Employing the high reflectivity of two parallel meta-surfaces allows for trapping selected THz photons within the cavity and thus only a weak optical modulation of the semiconductor absorbance is required to significantly damp the field within the cavity. The optical switching yields to modulation depths of more than 90% with insertion efficiencies of 80%.

AB - We present a versatile concept for all optical terahertz (THz) amplitude modulators based on a Fabry-Pérot semiconductor cavity design. Employing the high reflectivity of two parallel meta-surfaces allows for trapping selected THz photons within the cavity and thus only a weak optical modulation of the semiconductor absorbance is required to significantly damp the field within the cavity. The optical switching yields to modulation depths of more than 90% with insertion efficiencies of 80%.

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Cavity enhanced terahertz modulation

Abstract

ASJC Scopus subject areas

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